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Terahertz radiation could speed up computer memory by 1000 times
One area limiting speed in personal computing speed is memory -- specifically, how quickly individual memory cells can be switched, which is currently done using an external magnetic field. European and Russian scientists have proposed a new method using much more rapid terahertz radiation, aka "T-rays," the same things used in airport body scanners. According to their research, published in the journal Nature, swapping out magnetic fields for T-rays could crank up the rate of the cell-resetting process by a factor of 1000, which could be used to create ultrafast memory.
Scientists build double-floating-gate FET, believe it could revolutionize computer memory
Look, we get it, you want DRAM that behaves like flash, flash that behaves like DRAM, and everything in between -- speedy computer memory that doesn't lose its data when the power goes off, and lasts for years on end. Well, it looks there's a new challenger about to enter that ring -- double floating-gate field effect transistors, currently in prototype form at North Carolina State University. Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs, the second floating gate lets bits of data stay in an active, ready state, but the computer can also apply a higher voltage to "freeze" them in place. Since the memory can switch between static and dynamic modes in a single cycle and the data never disappears in between, researchers imagine the new tech could lead to instant-on computers and power-saving techniques that shut down idle memory banks. That's the consumer take, at least -- find the technical deep dive at our more coverage link.
IBM makes racetrack memory breakthrough, which could come in handy someday
If you can't tell your DRAM from your STT-MRAM, you'll need to bear with us for a sec: IBM's figured out the math required to read and write data from the spaces between magnetic fields, racing across a nanowire, at hundreds of miles per hour. IBM's been plugging away at the so-called racetrack memory since 2004, calling it the perfect hybrid of magnetic storage and flash, but until recently scientists didn't know whether the magnetic domain walls (where data will live) had any mass to speak of. As it turns out, they do, and thus have to obey the tiresome laws of physics as they move along the nanowire "track," but also accelerate and decelerate the exact same amount, more or less canceling out the effect. Long story short, IBM can use this knowledge to precisely position those 1s and 0s in their newfound data bank, and someday we'll all reap the benefits of dense, speedy and reliable memory. You know, assuming PRAM, FeRAM, and ReRAM don't eat IBM's lunch. PR after the break.
