Engadget http://www.engadget.com Engadget http://www.blogsmithmedia.com/www.engadget.com/media/feedlogo.gif Engadget http://www.engadget.com en-us Copyright 2012 Weblogs, Inc. The contents of this feed are available for non-commercial use only. Blogsmith http://www.blogsmith.com/<![CDATA[Micron teases working DDR4 RAM module, aims for late 2012 production]]>http://www.engadget.com/2012/05/08/micron-teases-working-ddr4-ram-module/http://www.engadget.com/2012/05/08/micron-teases-working-ddr4-ram-module/http://www.engadget.com/2012/05/08/micron-teases-working-ddr4-ram-module/#comments Micron teases working DDR4 RAM module, aims for late 2012 production

JEDEC is still finalizing the standards for DDR4, but that doesn't mean component manufacturers are holding back on developing the tech now. Samsung announced the first DDR4 DRAM module last year, and now Micron has announced that it's developed a working part of its own. Using its 30-nanometer technology, the 4GB x8 part is just the first of many products in the company's DDR4 portfolio -- it will expand to include x16 and x32 parts with initial speeds of 2400 MT/s and eventually the JEDEC's targeted of 3200 MT/s. So when will DDR3 seem like a distant relic? Well, Micron is already sending around samples to clients, and it hopes to begin full-scale production by the end of the year. As always, jump past the break for the full press release.

Continue reading Micron teases working DDR4 RAM module, aims for late 2012 production

Micron teases working DDR4 RAM module, aims for late 2012 production originally appeared on Engadget on Tue, 08 May 2012 13:03:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>ddr4DDR4 DRAMDdr4DramdramjedecMicronramTue, 08 May 2012 13:03:00 EST<![CDATA[Elpida files for bankruptcy protection as debts of $5.5 billion are revealed]]>http://www.engadget.com/2012/02/27/elpida-files-for-bankruptcy-protection-as-debts-of-5-5-billion/http://www.engadget.com/2012/02/27/elpida-files-for-bankruptcy-protection-as-debts-of-5-5-billion/http://www.engadget.com/2012/02/27/elpida-files-for-bankruptcy-protection-as-debts-of-5-5-billion/#comments
DRAM Maker Elpida has petitioned for a corporate reorganization (the equivalent of Chapter 11 or Administration) as the company has revealed it is close to collapse. President Yukio Sakamoto is expected to resign as the scapegoat for the calamity as it files for protection at the Tokyo District Court. The company, founded in 1999 as NEC Hitachi Memory Inc. has produced DRAM Products since 2000. It founded three wholly-owned subsidiaries: Tera Probe, which conducted wafer probe testing, Akita Elpida Memory Inc. which handled the back-end processes of DRAM production and Rexchip Electronics Corp, which handled the front-end.

After a blockbuster period of invention, a fall in prices and the global recession in 2006 forced the company to enter restructuring with a 30 billion Yen ($372.54 million) Government-backed loan. That swathe of cash was used to pump more money into investment and R&D, but the combination of strong Yen and the Thailand flooding has once again forced the company to come clean about its finances. It revealed today that it had debts of 448,033 million Yen, or $5.5 billion and without the protection of the court wouldn't last too much longer. Times of Japan points to the strength of Samsung's memory offerings as being a big contributor to Elpida's collapse, with president Sakamoto saying that DRAM is now as cheap as a "rice ball."

Elpida files for bankruptcy protection as debts of $5.5 billion are revealed originally appeared on Engadget on Mon, 27 Feb 2012 12:02:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>AdministrationAkita Elpida Memory Inc.AkitaElpidaMemoryInc.BankruptcyBusinessChapter 11Chapter11CollapseCorporate ReorganizationCorporateReorganizationDebtDRAMElpidaFinancialsInsolvencyNEC Hitachi Memory IncNecHitachiMemoryIncRAMRecessionRestructuringRestructuring PlanRestructuringPlanRexchip Electronics CorpRexchipElectronicsCorpTera ProbeTeraProbeThailand FloodsThailandFloodsTimes of JapanTimesOfJapanTokyo District CourtTokyoDistrictCourtYENYukio SakamotoYukioSakamotoMon, 27 Feb 2012 12:02:00 EST<![CDATA[US government rules three Barth patents invalid, sends Rambus scrambling]]>http://www.engadget.com/2012/01/30/us-government-rambus-barth-patents-invalid-ruling/http://www.engadget.com/2012/01/30/us-government-rambus-barth-patents-invalid-ruling/http://www.engadget.com/2012/01/30/us-government-rambus-barth-patents-invalid-ruling/#comments Suing's easy. It's the "winning" that trips folks up. Such is the case with Rambus, who has been relying oh-so-heavily on the so-called trio of Barth patents to actively pursue just about every technology company on the planet. For those unaware, Rambus has christened itself as a "technology licensing company," but with the last of three patents used to win infringement suits against NVIDIA and HP being declared invalid, it's probably scrambling for new tactics. According to a Reuters report, an appeals board at the US Patent and Trademark Office declared the patent invalid a few days back, with the previous two being knocked back in September. A couple of months back, Rambus' stock lost 60 percent of its value after a court decision led to the loss of a $4 billion antitrust lawsuit against Micron and Hynix, and we're guessing things won't be any happier when the markets open back up on Monday. The company's next move? "We're evaluating our options," said spokeswoman Linda Ashmore.

US government rules three Barth patents invalid, sends Rambus scrambling originally appeared on Engadget on Mon, 30 Jan 2012 07:46:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>Barth patentsBarthPatentsdramgovernmenthpinfringementinvalidmemorynandnvidiapatentpatent infringementPatentInfringementpatentsramrambusstorageususaMon, 30 Jan 2012 07:46:00 EST<![CDATA[Elpida starts shipments of next-gen Wide IO Mobile RAM]]>http://www.engadget.com/2011/12/30/elpida-starts-shipments-of-next-gen-wide-io-mobile-ram/http://www.engadget.com/2011/12/30/elpida-starts-shipments-of-next-gen-wide-io-mobile-ram/http://www.engadget.com/2011/12/30/elpida-starts-shipments-of-next-gen-wide-io-mobile-ram/#comments Tablets might be all sexy curves and Gorilla Glass, but it's what's on the inside that counts, right? Efficient DRAM mightn't set your heart alight, but Elpida Memory did just start shipping its next generation 30nm "Wide IO Mobile RAM." The firm claims it uses 50 percent less power compared with equivalent DDR2 sticks, letting you caress your beloved device for longer. This economy is thanks to it purring along at just 200MHz, which is even more impressive when you consider it brags a 12.8 GB/s data rate per chip. This pumped, yet frugal, performance comes courtesy of using x512-bit data width -- some ten times larger than that of existing DRAMs. The party doesn't stop there, with the Elpida also debuting its LPDDR3 chip, brushing aside LPDDR2 with twice the data rates at 6.4GB/s a slice, and a 25 percent smaller power-drain in tow. Mass production should commence in 2012, check the source link for the full break-down.

Elpida starts shipments of next-gen Wide IO Mobile RAM originally appeared on Engadget on Fri, 30 Dec 2011 19:09:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>200mhz30nm30nm dram30nmDramddr3ddr3 dramDdr3DramdramelpidaElpida MemoryElpidaMemoryLPDDR2LPDDR3memorymobilemobile ramMobileRamramwide io mobile ramWideIoMobileRamFri, 30 Dec 2011 19:09:00 EST<![CDATA[Samsung promotes DRAM chief to vice chairman, implements 'top-two' structure]]>http://www.engadget.com/2011/12/08/samsung-promotes-dram-chief-to-vice-chairman-implements-top-tw/http://www.engadget.com/2011/12/08/samsung-promotes-dram-chief-to-vice-chairman-implements-top-tw/http://www.engadget.com/2011/12/08/samsung-promotes-dram-chief-to-vice-chairman-implements-top-tw/#commentsSamsung reshuffled its managerial hierarchy yesterday, promoting Kwon Oh Hyun, head of its DRAM operations, to vice chairman. Kwon, who successfully steered Samsung through an industry-wide price slump last quarter, will continue to head up the company's chip and LCD divisions, while working alongside Jung Yeon Joo -- the former CEO of Samsung C&T Corporation who was also promoted to vice chairman. The restoration of this "top-two" structure was one of several moves the Samsung Group made on Wednesday, including the announcement of six new presidents. Kwon's advancement, however, is certainly the most noteworthy. As the Korea Times reports, the move has already garnered speculation among industry observers, some of whom believe that Kwon's new position signifies Samsung's equal commitment to both component and product divisions. In a statement, Samsung praised the executive for navigating its DRAM business through choppy economic waters, while crediting him for the "strengthening of Samsung's market leadership in memory products." Read more at the source links below.

Samsung promotes DRAM chief to vice chairman, implements 'top-two' structure originally appeared on Engadget on Thu, 08 Dec 2011 09:44:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>boardbusinesschipcorporateDRAMhdpostcrossindustrykoreaKwon Oh HyunKwonOhHyunmanagementmemory chipMemoryChipmobilepostcrossmoneypromotionreshufflesamsungsouth koreaSouthKoreavice chairmanvice presidentViceChairmanVicePresidentThu, 08 Dec 2011 09:44:00 EST<![CDATA[The big memory cube gamble: IBM and Micron stack their chips]]>http://www.engadget.com/2011/12/06/the-big-memory-cube-gamble-ibm-and-micron-stack-their-chips/http://www.engadget.com/2011/12/06/the-big-memory-cube-gamble-ibm-and-micron-stack-their-chips/http://www.engadget.com/2011/12/06/the-big-memory-cube-gamble-ibm-and-micron-stack-their-chips/#comments Manufacturers have been murmuring about 3D memory chips for years, but an escalation in recent radio chatter suggests the technology is on the cusp of becoming commercial. Intel unveiled a Hybrid Memory Cube (HMC) at IDF, which promises seven times the energy efficiency of today's DDR3, and now IBM and Micron have shown their hand too. The pair just struck up a partnership to produce cubes using layers of DRAM connected by vertical conduits known as through-silicon vias (TSVs). These pillars allow a 90 percent reduction in a memory chip's physical footprint, a 70 percent cut in its appetite for energy, and -- best of all -- a radical increase in bandwidth: HMC prototypes have already scored 128Gb/s 128GB/s, which makes 6Gb/s SATA III look like a bottleneck. It certainly sounds like a game-changer, unless of course some rival technology like ferroelectric memory gets there first.

Update: Doh, sorry for the wrong caps, which were shrunken by a factor of eight. For comparison, current high-level DRAM delivers around 12.8GB/s.

[Thanks, Maximilian]

The big memory cube gamble: IBM and Micron stack their chips originally appeared on Engadget on Tue, 06 Dec 2011 08:57:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>128Gbs3d chip3d memory3dChip3dMemorybandwidthDRAMefficiencyferamferroelectricFeTRAMHMChybrid memory cubeHybridMemoryCubeIBMmemoryMicronspeedthrough silicon viaThroughSiliconViaTSVTue, 06 Dec 2011 08:57:00 EST<![CDATA[AMD's getting into the DRAM game, isn't afraid to shoot the outside J]]>http://www.engadget.com/2011/11/28/amds-getting-into-the-dram-game-isnt-afraid-to-shoot-the-outs/http://www.engadget.com/2011/11/28/amds-getting-into-the-dram-game-isnt-afraid-to-shoot-the-outs/http://www.engadget.com/2011/11/28/amds-getting-into-the-dram-game-isnt-afraid-to-shoot-the-outs/#comments
Don't you wish every component in your computer were made by the same company? That's AMD's thinking behind a range of desktop DRAM -- leaping into bed with VisionTek and Patriot Memory who will build the branded modules to Sunnyvale's specifications, tweaked for speed with OverDrive tuning tools. You'll be able to pick up DIMMs in 2GB, 4GB and 8GB flavors -- a low-end "entertainment" model running at 1333MHz and 1600MHz, "performance" edition also at 1600MHz and a Radeon-branded unit that will top the family at 1866MHz. The stuff will be available from retailers like Amazon, Fry's and Best Buy Canada, but we don't know when nor how much it'll cost to bring this level of branding harmony to the inside of your case.

Continue reading AMD's getting into the DRAM game, isn't afraid to shoot the outside J

AMD's getting into the DRAM game, isn't afraid to shoot the outside J originally appeared on Engadget on Mon, 28 Nov 2011 13:54:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>Advanced Micro DevicesAdvancedMicroDevicesAmazonAmazon.comAMDAMD RAMAmdRamBest BuyBest Buy CanadaBestBuyBestBuyCanadaDesktop RAMDesktopRamDH DistributingDH DistributionDhDistributingDhDistributionDRAMFrysFrys ElectronicsFrysElectronicsMemory ExpressMemoryExpressRAMMon, 28 Nov 2011 13:54:00 EST<![CDATA[Single-chip DIMM stacks integrated circuits like shingles for greater DRAM efficiency]]>http://www.engadget.com/2011/09/08/single-chip-dimm-stacks-integrated-circuits-like-shingles-for-gr/http://www.engadget.com/2011/09/08/single-chip-dimm-stacks-integrated-circuits-like-shingles-for-gr/http://www.engadget.com/2011/09/08/single-chip-dimm-stacks-integrated-circuits-like-shingles-for-gr/#comments Cellphone screens may be getting bigger, but the push to shrink all other computing components continues unabated. Invensas is well aware of this, and has come up with new, multi-die memory that promises to be both smaller in size and more capacious than existing DRAM. Called xFD, it mounts integrated circuits in a "shingle-like configuration" on top of one another to accomplish the trick. Such stacking increases speed while reducing power consumption due to much shorter connections between RAM dies than what's found in multi-chip DIMM. Of course, the memory won't be popping up in PCs anytime soon, but the company will be showing off its new tech at IDF next week. While you wait, there's more RAM reading in the PR after the break.

Continue reading Single-chip DIMM stacks integrated circuits like shingles for greater DRAM efficiency

Single-chip DIMM stacks integrated circuits like shingles for greater DRAM efficiency originally appeared on Engadget on Thu, 08 Sep 2011 08:22:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>dimmdramefficiencyidfidf 2011Idf2011intel developers conferenceIntelDevelopersConferenceinvensasmemoryramTesseraTessera TechnologiesTesseraTechnologiesThu, 08 Sep 2011 08:22:00 EST<![CDATA[Samsung's 30nm DDR3 DRAM boosts speeds, cuts power consumption]]>http://www.engadget.com/2011/06/09/samsungs-30nm-ddr3-dram-boosts-speeds-cuts-power-consumption/http://www.engadget.com/2011/06/09/samsungs-30nm-ddr3-dram-boosts-speeds-cuts-power-consumption/http://www.engadget.com/2011/06/09/samsungs-30nm-ddr3-dram-boosts-speeds-cuts-power-consumption/#comments Samsung RAM
Samsung has been taunting us with the promise of 30nm DRAM for quite sometime, and when the tiny chips went into mass production last year it was the world's servers that got first dibs. The average consumer stuck with that aging 40nm stuff -- blech. This summer though, you'll finally be able to snatch up some of Sammy's latest tech in the form of two and four GB DDR3 1600 sticks for both laptops and desktops. The company claims that its new RAM modules are up to two-thirds more energy efficient than more common 60nm chips and 20 percent faster that its own 40nm ones. Both solo and dual packs will be hitting retailers soon starting at "less than $30." Check out the PR after the break.

Continue reading Samsung's 30nm DDR3 DRAM boosts speeds, cuts power consumption

Samsung's 30nm DDR3 DRAM boosts speeds, cuts power consumption originally appeared on Engadget on Thu, 09 Jun 2011 12:00:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>30nm30nm dram30nmDramddr3ddr3 dramDdr3Dramdesktop ramDesktopRamdramlaptop ramLaptopRammemoryramsamsungvery low profileVeryLowProfileThu, 09 Jun 2011 12:00:00 EST<![CDATA[Samsung starts baking 30nm 4Gb LPDDR2 chips, packaging 2GB mobile RAM in April]]>http://www.engadget.com/2011/03/25/samsung-starts-baking-30nm-4gb-lpddr2-chips-packaging-2gb-mobil/http://www.engadget.com/2011/03/25/samsung-starts-baking-30nm-4gb-lpddr2-chips-packaging-2gb-mobil/http://www.engadget.com/2011/03/25/samsung-starts-baking-30nm-4gb-lpddr2-chips-packaging-2gb-mobil/#comments When it comes to mobile RAM, capacity is often what pops to mind first while we overlook speed and power consumption, but Samsung's latest delivery is worth the extra attention. Earlier this month, said Korean giant started producing 30nm 4Gb 1066Mbps LPDDR2 (or simply Mobile DDR2) chips, in order to phase out its 40nm ones that topped 2Gb at a 800Mbps transmission rate. To put it in perspective, a 40nm 1GB package consists of four 2Gb chips, whereas the new 30nm one will only need two 4Gb chips, thus reducing the package thickness by 20 percent (down to 0.8mm) and power consumption by 25 percent. It's hard to tell when we'll start seeing these bits of silicon entering the consumer market, but Samsung's already stamping out 1GB modules this month, with a 2GB version to follow next month. Oh yes, we're definitely liking the sound of 2GB RAM for mobile phones.

Samsung starts baking 30nm 4Gb LPDDR2 chips, packaging 2GB mobile RAM in April originally appeared on Engadget on Fri, 25 Mar 2011 11:57:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>30nm4Gbdramfabricationlow powerlow power ddr2LowPowerLowPowerDdr2lpddr2memorymemory fabricationMemoryFabricationmobile ddr2mobile ramMobileDdr2MobileRamramram fabricationram productionRamFabricationRamProductionsamsungsiliconFri, 25 Mar 2011 11:57:00 EST<![CDATA[Sandy Bridge memory performance tested, value of expensive top-shelf memory questioned]]>http://www.engadget.com/2011/02/11/sandy-bridge-memory-performance-tested-value-of-expensive-top-s/http://www.engadget.com/2011/02/11/sandy-bridge-memory-performance-tested-value-of-expensive-top-s/http://www.engadget.com/2011/02/11/sandy-bridge-memory-performance-tested-value-of-expensive-top-s/#commentsSandy Bridge memory performance tested, value of expensive top-shelf memory questioned Intel's Sandy Bridge chipset hasn't exactly had a flawless launch, but let's move past that and take a look at how well it performs before it starts breaking. One of the improvements here is meant to be better memory performance, and The Tech Report ran a variety of sticks through the gamut to see what the benefits of high-cost, high-speed memory is versus the cheaper stuff. The results showed that, in the vast majority of cases, DDR3-1333MHz memory was barely outclassed by the DDR3-2133MHz stuff, exhibiting only a modest improvement in games, just a couple FPS at most. Lesson learned? Save your pennies -- or go ahead and spend 'em elsewhere, like that new Thermaltake case.

Sandy Bridge memory performance tested, value of expensive top-shelf memory questioned originally appeared on Engadget on Fri, 11 Feb 2011 13:57:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>benchmarkddr3dramintelmemoryperformanceramsandy bridgeSandyBridgetestFri, 11 Feb 2011 13:57:00 EST<![CDATA[Scientists build double-floating-gate FET, believe it could revolutionize computer memory]]>http://www.engadget.com/2011/01/23/scientists-build-double-floating-gate-fet-believe-it-could-revo/http://www.engadget.com/2011/01/23/scientists-build-double-floating-gate-fet-believe-it-could-revo/http://www.engadget.com/2011/01/23/scientists-build-double-floating-gate-fet-believe-it-could-revo/#commentsLook, we get it, you want DRAM that behaves like flash, flash that behaves like DRAM, and everything in between -- speedy computer memory that doesn't lose its data when the power goes off, and lasts for years on end. Well, it looks there's a new challenger about to enter that ring -- double floating-gate field effect transistors, currently in prototype form at North Carolina State University. Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs, the second floating gate lets bits of data stay in an active, ready state, but the computer can also apply a higher voltage to "freeze" them in place. Since the memory can switch between static and dynamic modes in a single cycle and the data never disappears in between, researchers imagine the new tech could lead to instant-on computers and power-saving techniques that shut down idle memory banks. That's the consumer take, at least -- find the technical deep dive at our more coverage link.

Scientists build double-floating-gate FET, believe it could revolutionize computer memory originally appeared on Engadget on Sun, 23 Jan 2011 13:20:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>computer memoriescomputer memoryComputerMemoriesComputerMemorydouble floating-gateDoubleFloating-gateDRAMFETFGMOSfield effect transistorsFieldEffectTransistorsflash memoryflash storageFlashMemoryFlashStoragefloating gatefloating-gateFloatingGatememoryMOSFETRAMresearchsolid statesolid state storageSolidStateSolidStateStoragestorageSun, 23 Jan 2011 13:20:00 EST<![CDATA[OCZ quits DRAM business to focus on super-speedy SSDs]]>http://www.engadget.com/2011/01/13/ocz-quits-dram-business-to-focus-on-super-speedy-ssds/http://www.engadget.com/2011/01/13/ocz-quits-dram-business-to-focus-on-super-speedy-ssds/http://www.engadget.com/2011/01/13/ocz-quits-dram-business-to-focus-on-super-speedy-ssds/#comments OCZ, a company that started life a decade ago by churning out DRAM modules for enthusiasts to throw into their towering rigs, has now announced it's abandoning that market entirely. As PC Perspective points out, it's grown increasingly difficult for companies to differentiate their products when it comes to memory -- most of it just works and most of it is pretty fast -- and continually declining prices have apparently forced OCZ's hand. The San Jose-based company's new primary breadwinner will be solid state drives, which already account for a substantial proportion of revenues and look set to grow exponentially as their own prices dip a little further into the range of the affordable. It's a shame we'll no longer have that bold Z to look at when picking out memory sticks for our next self-built machine, but maybe it's all for the best. Check out an interview with an OCZ VP at the source link below.

Continue reading OCZ quits DRAM business to focus on super-speedy SSDs

OCZ quits DRAM business to focus on super-speedy SSDs originally appeared on Engadget on Thu, 13 Jan 2011 01:05:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>dramexitindustrymemoryoczramssdstorageThu, 13 Jan 2011 01:05:00 EST<![CDATA[Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3]]>http://www.engadget.com/2011/01/04/samsung-develops-ddr4-memory-with-up-to-40-percent-better-energy/http://www.engadget.com/2011/01/04/samsung-develops-ddr4-memory-with-up-to-40-percent-better-energy/http://www.engadget.com/2011/01/04/samsung-develops-ddr4-memory-with-up-to-40-percent-better-energy/#comments Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated. Check out Samsung's PR after the break.

Continue reading Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3

Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3 originally appeared on Engadget on Tue, 04 Jan 2011 12:43:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>30nmcomponentcomponentsddrddr4dramjedecmemorypseudo open drainPseudoOpenDrainramsamsungTue, 04 Jan 2011 12:43:00 EST<![CDATA[Elpida and Spansion move from 'it's complicated' to 'engaged,' look to conquer NAND universe]]>http://www.engadget.com/2010/07/24/elpida-and-spansion-move-from-its-complicated-to-engaged-l/http://www.engadget.com/2010/07/24/elpida-and-spansion-move-from-its-complicated-to-engaged-l/http://www.engadget.com/2010/07/24/elpida-and-spansion-move-from-its-complicated-to-engaged-l/#commentsThe more the merrier, right? Cutesy sayings aside, the world is gearing up to say "hello" to yet another player in the NAND flash memory market, as Japan's own Elpida Memory (which currently specializes in DRAM) will be joining the fray in the coming months. Said outfit stated this week that it has entered into an alliance with Spansion (the former flash memory joint venture between Fujitsu and AMD), with Spansion licensing its NAND flash intellectual property to Elpida as part of the deal. If all goes to plan, Elpida will begin producing flash chips at its western Japan plant "as early as next year," with some of the output being funneled directly to Spansion. 'Course, with the explosion in smartphone popularity, it's not shocking to see a DRAM stalwart looking for ways to dip its toes in that high-demand NAND stuff, and as consumers, you certainly won't find us kvetching about the competition.

Continue reading Elpida and Spansion move from 'it's complicated' to 'engaged,' look to conquer NAND universe

Elpida and Spansion move from 'it's complicated' to 'engaged,' look to conquer NAND universe originally appeared on Engadget on Sat, 24 Jul 2010 07:41:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>businessdramElpidaflashflash memoryFlashMemoryindustrymemorymergernandnand flashNandFlashpartnerpartnershipramspansionSat, 24 Jul 2010 07:41:00 EST<![CDATA[Samsung's 30nm DDR3 DRAM set to lower costs and power consumption later this year]]>http://www.engadget.com/2010/02/01/samsungs-30nm-ddr3-dram-set-to-lower-costs-and-power-consumptio/http://www.engadget.com/2010/02/01/samsungs-30nm-ddr3-dram-set-to-lower-costs-and-power-consumptio/http://www.engadget.com/2010/02/01/samsungs-30nm-ddr3-dram-set-to-lower-costs-and-power-consumptio/#comments It seems like we've been talking about Samsung and its 30nm promise for an eternity, but ever so slowly real products are starting to head out into real consumers' hands. After recently announcing its forthcoming NAND memory cards, the company is back with word of 2Gb DDR3 DRAM modules that consume 30 percent less power than their 50nm counterparts, yet are also more cost-effective to manufacture. Operating at either 1.5 or 1.35 volts, the 30nm parts are set for mass production in the second half of 2010, so they won't be here quite as soon as we'd like, but at least we'll know what to put down in our next Holiday Gift Guide. Just imagine your laptop purring along with a paired set of ultra-efficient RAM sticks and one of those newfangled 25nm-based SSDs from Intel -- you could probably power it on the sheer strength of your geek lust alone.

Samsung's 30nm DDR3 DRAM set to lower costs and power consumption later this year originally appeared on Engadget on Mon, 01 Feb 2010 05:32:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>30nmddr3ddr3 ramDdr3RamdrammemoryramsamsungMon, 01 Feb 2010 05:32:00 EST<![CDATA[Component shortages lead analysts to forecast rise in prices of personal electronics]]>http://www.engadget.com/2010/01/13/component-shortages-lead-analysts-to-forecast-rise-in-prices-of/http://www.engadget.com/2010/01/13/component-shortages-lead-analysts-to-forecast-rise-in-prices-of/http://www.engadget.com/2010/01/13/component-shortages-lead-analysts-to-forecast-rise-in-prices-of/#commentsAs you might well know, we're not the biggest fans of analyst blather, but this piece of research by Gartner is backed by some substantial numbers. The FT reports that DRAM prices have recently risen by 23 percent, followed closely by LCD prices with a 20 percent jump, both in response to the financial crisis the whole globe seems to be suffering from. Because the effects of recently renewed investment in capacity building won't be felt for a while, we're told to prepare for higher prices throughout this year -- a significant combo breaker from the previous decade's average of around 7.8 percent drops. Oh well, let's just cling to the encouraging signs for the future and ignore this bump on the road to gadget nirvana.

[Thanks, Ben W]

Component shortages lead analysts to forecast rise in prices of personal electronics originally appeared on Engadget on Wed, 13 Jan 2010 07:05:00 EST. Please see our terms for use of feeds.

Permalink | Email this | Comments]]>analysisanalystscomponentscostdramforecastgartnerindustryindustry analystIndustryAnalystmemorymemory pricesMemoryPricespredictionpricepricesramresearchshortageshortagesWed, 13 Jan 2010 07:05:00 EST<![CDATA[Rambus and Kingston build a threaded module prototype, claim 50 percent better memory throughput]]>http://www.engadget.com/2009/09/21/rambus-and-kingston-build-a-threaded-module-prototype-claim-50/http://www.engadget.com/2009/09/21/rambus-and-kingston-build-a-threaded-module-prototype-claim-50/http://www.engadget.com/2009/09/21/rambus-and-kingston-build-a-threaded-module-prototype-claim-50/#comments How do you thread memory tasks and are women naturally better at it than men? Such were the questions that roamed our limitless minds as we sought to understand what exactly Rambus and Kingston had achieved. Based on standard DDR3 chips, the new threading tech essentially creates multiple independent channels per memory module, allowing multicore processors to utilize the available RAM more efficiently. That results, says Rambus, in systems that offer 50 percent higher throughput that the standard stuff and suckle 20 percent less power due to the compartmentalization of each module. Neat. More details are promised at the Intel Developer Conference, which kicks off tomorrow in San Fran.

[Via SlashGear]

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Rambus and Kingston build a threaded module prototype, claim 50 percent better memory throughput originally appeared on Engadget on Mon, 21 Sep 2009 07:48:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>DDR3DRAMKingstonmemory threadingMemoryThreadingprototypeRAMRambusthreaded memorythreaded modulethreaded module prototypeThreadedMemoryThreadedModuleThreadedModulePrototypeMon, 21 Sep 2009 07:48:00 EST<![CDATA[Toshiba makes progress on FeRAM, still no tangible product in sight]]>http://www.engadget.com/2009/02/09/toshiba-makes-progress-on-feram-still-no-tangible-product-in-si/http://www.engadget.com/2009/02/09/toshiba-makes-progress-on-feram-still-no-tangible-product-in-si/http://www.engadget.com/2009/02/09/toshiba-makes-progress-on-feram-still-no-tangible-product-in-si/#commentsPhew. For a moment year or so there we reckoned that amazing FeRAM discovery had been pushed aside and forgotten entirely. Thankfully, Toshiba has picked up the ball and refined the original chainFeRAM architecture by creating a new architecture that prevents cell signal degradation -- which, as you may or may not know, is the usual tradeoff from chip scaling. In essence, this has allowed the company to design the world's highest bandwidth, highest density (128-megabit) non-volatile RAM. Unfortunately, this amazing device -- which should realize read / write speeds of 1.6 gigabytes a second and combine the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off -- is still in prototype form, which probably means we're months (if not years) away from actually seeing a tangible end product hit store shelves.

[Via AkihabaraNews]

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Toshiba makes progress on FeRAM, still no tangible product in sight originally appeared on Engadget on Mon, 09 Feb 2009 14:58:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>chainFeRAMdramferamferroelectricflash memoryFlashMemorykoreakoreanmemoryprototyperamtoshibaMon, 09 Feb 2009 14:58:00 EST<![CDATA[Rambus introduces 4.3Gbps mobile memory]]>http://www.engadget.com/2009/02/02/rambus-introduces-4-3gbps-mobile-memory/http://www.engadget.com/2009/02/02/rambus-introduces-4-3gbps-mobile-memory/http://www.engadget.com/2009/02/02/rambus-introduces-4-3gbps-mobile-memory/#commentsIt's not all just lawsuits and overinflated posturing for Rambus -- the prickly memory firm will later today demo what its calling the Mobile Memory Initiative, a 4.3Gbps phone-oriented variant of the XDR RAM used in the PS3 that requires just 100mV of power. That means companies can either build super-powerful phones that take advantage of a complete MMI system's estimated 17GBps throughput, or build cheaper devices that offer performance equivalent to today's memory with fewer MMI parts. Rambus won't say who it's working with to bring out MMI, but we're going to have to wait a bit before we all score cheap HD videophones -- the first products aren't scheduled to hit until early 2010.

[Via Electronista]

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Rambus introduces 4.3Gbps mobile memory originally appeared on Engadget on Mon, 02 Feb 2009 13:32:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>drammemorymmimobilemobile memory initiativeMobileMemoryInitiativeramrambusrdramMon, 02 Feb 2009 13:32:00 EST<![CDATA[Rambus introduces 4.3Gbps mobile memory]]>http://www.engadget.com/2009/02/02/rambus-introduces-4-3gbps-mobile-memory/http://www.engadget.com/2009/02/02/rambus-introduces-4-3gbps-mobile-memory/http://www.engadget.com/2009/02/02/rambus-introduces-4-3gbps-mobile-memory/#commentsIt's not all just lawsuits and overinflated posturing for Rambus -- the prickly memory firm will later today demo what its calling the Mobile Memory Initiative, a 4.3Gbps phone-oriented variant of the XDR RAM used in the PS3 that requires just 100mV of power. That means companies can either build super-powerful phones that take advantage of a complete MMI system's estimated 17GBps throughput, or build cheaper devices that offer performance equivalent to today's memory with fewer MMI parts. Rambus won't say who it's working with to bring out MMI, but we're going to have to wait a bit before we all score cheap HD videophones -- the first products aren't scheduled to hit until early 2010.

[Via Electronista]

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Rambus introduces 4.3Gbps mobile memory originally appeared on Engadget on Mon, 02 Feb 2009 13:32:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>drammemorymmimobile memory initiativeMobileMemoryInitiativeramrambusrdramMon, 02 Feb 2009 13:32:00 EST<![CDATA[Samsung's 4Gb chip promises 32GB DDR3 memory modules for PCs and laptops]]>http://www.engadget.com/2009/01/30/samsungs-4gb-chip-promises-32gb-ddr3-memory-modules-for-pcs-and/http://www.engadget.com/2009/01/30/samsungs-4gb-chip-promises-32gb-ddr3-memory-modules-for-pcs-and/http://www.engadget.com/2009/01/30/samsungs-4gb-chip-promises-32gb-ddr3-memory-modules-for-pcs-and/#comments Oh Samsung, you and your world's firsts. We like to tease but your latest breakthrough is truly notable: the world's first 4Gb (bit, not Byte) DDR3 DRAM PC memory chip based on relatively frugal 50-nm processes. Two things here: 1) the new chips consume 40% less power than previous DDR3 memory modules, and 2) the chips pave the way for 32GB (Byte, not bit) DIMM modules. The first modules will come in capacities of 16GB (containing 32 of the new 4Gb chips) for servers, 8GB DDR3 DIMMs for desktops, and 8GB SO-DIMMs for laptops. When, is the question Samsung fails to answer. The question to you is this: you're not still buying full-spec'd DDR2-based laptops are you?

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Samsung's 4Gb chip promises 32GB DDR3 memory modules for PCs and laptops originally appeared on Engadget on Fri, 30 Jan 2009 04:06:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>16gb32gb50nm8gbddr2ddr3dimmdramfirstmemorysamsungso-dimmworld firstWorldFirstFri, 30 Jan 2009 04:06:00 EST<![CDATA[Samsung seems pretty proud of world's highest density DRAM chip]]>http://www.engadget.com/2009/01/29/samsung-seems-pretty-proud-of-worlds-highest-density-dram-chip/http://www.engadget.com/2009/01/29/samsung-seems-pretty-proud-of-worlds-highest-density-dram-chip/http://www.engadget.com/2009/01/29/samsung-seems-pretty-proud-of-worlds-highest-density-dram-chip/#commentsThose of you who actually keep track of which outfits are on top of others in terms of density (yeah, all 8.4 of you) have a new winner to document, as Samsung has just announced the development of the planet's highest density DRAM chip. By utilizing 50 nanometer technology, Sammy has concocted a four gigabit DDR3 DRAM chip, and if it has its druthers, the low-power device will be used in data centers and servers the world over. The module can be produced in 16GB registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. If dual-die package technology is tapped into, the new device can scale as high as 32GB, though Samsung is careful not to mention just how much you'll have to pay for this stuff.

[Via I4U News]

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Samsung seems pretty proud of world's highest density DRAM chip originally appeared on Engadget on Thu, 29 Jan 2009 12:21:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>DDR3densityDRAMflash memoryFlashMemoryRAMSamsungThu, 29 Jan 2009 12:21:00 EST<![CDATA[Taiwan's proposed DRAM industry bailout puts the word "global" in economic downturn]]>http://www.engadget.com/2008/12/24/taiwans-proposed-dram-industry-bailout-puts-the-word-global-i/http://www.engadget.com/2008/12/24/taiwans-proposed-dram-industry-bailout-puts-the-word-global-i/http://www.engadget.com/2008/12/24/taiwans-proposed-dram-industry-bailout-puts-the-word-global-i/#commentsIt looks like a $6.5 billion dollar bailout of Taiwan's DRAM industry is in the works, a move that is proving as controversial on the island as the auto bailout is Stateside. The DRAM market has been in decline a while now, as evidenced by the recent closure of the Hynix plant in Eugene, where some 1,100 souls once worked doggedly to topple the likes of Intel and AMD. Now, we don't really know all the particulars of this admittedly complex situation, but we sure hope that lawmakers over there are able to work something out -- after the recent debut of Phantom of the Opera peformed by robots at Taiwan's University of Science and Technology, we're sure that people there could use something to lift their spirits.

[Via TG Daily]

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Taiwan's proposed DRAM industry bailout puts the word "global" in economic downturn originally appeared on Engadget on Wed, 24 Dec 2008 15:08:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>AMDDRAMDRAM industryDramIndustryeconomyHynixIntelrecessionTaiwanWed, 24 Dec 2008 15:08:00 EST<![CDATA[Super Talent caters to Eee PC with new 16/32/64GB SSDs]]>http://www.engadget.com/2008/10/08/super-talent-caters-to-eee-pc-with-new-16-32-64gb-ssds/http://www.engadget.com/2008/10/08/super-talent-caters-to-eee-pc-with-new-16-32-64gb-ssds/http://www.engadget.com/2008/10/08/super-talent-caters-to-eee-pc-with-new-16-32-64gb-ssds/#comments
Though not the first SSDs we've seen looking for homes specifically in netbooks, Super Talent is hoping to make an even bigger splash with its latest trio and their bite-sized prices. Merely days after causing us all to drool with a sub-$300 128GB drive, the firm has revealed a trifecta of mini PCIe SSDs designed "explicitly for the ASUS Eee PC." The units are available in 16GB, 32GB and 64GB flavors, each with 40MB/sec maximum read speeds and 15MB/sec maximum write rates. The trio is expected to hit mass production next month, and they'll only cost you $53, $79 and $149 in order of mention.

[Via jkOnTheRun]

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Super Talent caters to Eee PC with new 16/32/64GB SSDs originally appeared on Engadget on Wed, 08 Oct 2008 07:35:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>ASUSDRAMEeeEee PCEeePcflash storageFlashStorageFPM16GHAEFPM32GHAEFPM64GHAEmini PCIeMiniPcienetbookSSDSuper TalentSuperTalentWed, 08 Oct 2008 07:35:00 EST<![CDATA[16GB Hynix DDR3 RAM modules demonstrated at IDF]]>http://www.engadget.com/2008/08/22/16gb-hynix-ddr3-ram-modules-demonstrated-at-idf/http://www.engadget.com/2008/08/22/16gb-hynix-ddr3-ram-modules-demonstrated-at-idf/http://www.engadget.com/2008/08/22/16gb-hynix-ddr3-ram-modules-demonstrated-at-idf/#comments
Remember that MetaRAM technology we figured was nothing more than a sophisticated joke back in February? Intel, one of the noteworthy backers, has proven that said tech actually is one rung above snake-oil at its own Developers Conference in San Francisco. Hynix-made DDR3 DIMMs packing 16GB of memory were reportedly created via the MetaRAM method (and subsequently shown off), and just in case you're not wowed by such wizardry, the demo system included no fewer than ten of these modules. Just in case that sort of flew over your head, the machine they were in possessed 160GB of RAM. Unfortunately, we've a feeling these are quite aways out from hitting the consumer market.

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16GB Hynix DDR3 RAM modules demonstrated at IDF originally appeared on Engadget on Fri, 22 Aug 2008 08:56:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>16gbdimmDRAMHynixidfidf 2008Idf2008intelmemoryMetaRAMNehalemramFri, 22 Aug 2008 08:56:00 EST<![CDATA[Hynix set to close its Oregon plant, cutting 1,100 jobs]]>http://www.engadget.com/2008/07/24/hynix-set-to-close-its-oregon-plant-cutting-1-100-jobs/http://www.engadget.com/2008/07/24/hynix-set-to-close-its-oregon-plant-cutting-1-100-jobs/http://www.engadget.com/2008/07/24/hynix-set-to-close-its-oregon-plant-cutting-1-100-jobs/#commentsIt may have once talked about toppling both Intel and AMD within a decade, but South Korea's Hynix looks to have been knocked back on its heels a bit amid a general downturn in the DRAM market, and it's now taken the rather drastic step of closing down its plan in Eugene, Oregon, eliminating some 1,100 jobs in the process. As EE Times points out, that move is at least partly due to the fact that 300mm plants are ramping up faster than expected, making 200mm plans like the one in Oregon far less cost effective to operate and, apparently, too expensive to upgrade. There's also the little matter of some tariffs the United States had imposed on Hynix, which it was able to avoid thanks to its plant in Oregon, but which now appear to be set to expire. For its part, Hynix denies that has anything to do with the plant closing, and it adds that it is still looking at ways to "have a presence" in Eugene.

[Via The Wall Street Journal]

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Hynix set to close its Oregon plant, cutting 1,100 jobs originally appeared on Engadget on Thu, 24 Jul 2008 10:41:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>dramhynixplantplant closingPlantClosingramThu, 24 Jul 2008 10:41:00 EST<![CDATA[Toshiba says its 1GB MRAM chips are "almost ready," we're ready now]]>http://www.engadget.com/2008/06/02/toshiba-says-its-1gb-mram-chips-are-almost-ready-were-ready/http://www.engadget.com/2008/06/02/toshiba-says-its-1gb-mram-chips-are-almost-ready-were-ready/http://www.engadget.com/2008/06/02/toshiba-says-its-1gb-mram-chips-are-almost-ready-were-ready/#commentsMRAM from Toshiba
It wasn't long ago that IBM promised to unleash its racetrack MRAM (magnetoresistive RAM) on a power and speed-hungry computing public, but now Toshiba says its 1GB MRAM chips are "almost ready". The chips use Spin-RAM (STT-RAM) and Toshiba fully expects them to take over where DRAM left off by 2015. They say their new chips use about 10 percent the energy used by DRAM and, like MRAM is supposed to do, retain memory even after the power supply has been cut off. So what does this mean? Instant boot-up, fast access times, and super-low power consumption. While MRAM has been announced by others, capacities and speeds promised by this 1GB jobby from Toshiba will certainly make things worthwhile.

[Via MRAM-info]

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Toshiba says its 1GB MRAM chips are "almost ready," we're ready now originally appeared on Engadget on Mon, 02 Jun 2008 13:44:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>dramflash memoryFlashMemoryibmmramracetrackstt-ramtoshibaMon, 02 Jun 2008 13:44:00 EST<![CDATA[HP creates radical 'memristor' technology, brains explode]]>http://www.engadget.com/2008/04/30/hp-creates-radical-memristor-technology-brains-explode/http://www.engadget.com/2008/04/30/hp-creates-radical-memristor-technology-brains-explode/http://www.engadget.com/2008/04/30/hp-creates-radical-memristor-technology-brains-explode/#commentsHP Memristor"Memristors" are one of several memory technologies that have been theorized and promised in the coming years. HP has made a real memristor, however, and the way solid state memory is created and stored could have just changed forever. First theorized in 1971, memristors are basic circuits like resistors, capacitors, and inductors. These circuits are able to store data by allowing their levels of electrical resistance to fluctuate between high and low, or 0 and 1 to a computer. Like flash memory, they retain that data without power -- except they do it all on one circuit and at the speed of D-RAM. In the end, we could be looking at a whole new kind of storage, as long as someone can figure out how to get these things onto integrated circuits. Nerds hats off, return to your fanboyism -- now.

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HP creates radical 'memristor' technology, brains explode originally appeared on Engadget on Wed, 30 Apr 2008 16:06:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>circuitdramhpmemorymemristorWed, 30 Apr 2008 16:06:00 EST<![CDATA[Yowza: Toshiba's net profits plunge 95% thanks to HD DVD, flash prices]]>http://www.engadget.com/2008/04/25/yowza-toshibas-net-profits-plunge-95-thanks-to-hd-dvd-flash/http://www.engadget.com/2008/04/25/yowza-toshibas-net-profits-plunge-95-thanks-to-hd-dvd-flash/http://www.engadget.com/2008/04/25/yowza-toshibas-net-profits-plunge-95-thanks-to-hd-dvd-flash/#commentsA year ago today Toshiba was announcing ¥26.17 billion in profits for the quarter. Today, just ¥1.25 billion or about $12 million. In addition to the $580 million hit on account of its withdrawal from HD DVD, Toshiba also saw a swift decline in flash memory prices. While bad news for Toshiba on all accounts, we consumers are basking in a market dominated by a single high-def optical disc standard and cheap NAND and DRAM pricing. Sorry Tosh, but you won't find any tears around here.

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Yowza: Toshiba's net profits plunge 95% thanks to HD DVD, flash prices originally appeared on Engadget on Fri, 25 Apr 2008 04:59:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>breaking newsBreakingNewsdramfinancialflashhdhd dvdHdDvdnandprofittoshibaFri, 25 Apr 2008 04:59:00 EST<![CDATA[Yowza: Toshiba's net profits plunge 95% thanks to HD DVD, flash prices]]>http://www.engadget.com/2008/04/25/yowza-toshibas-net-profits-plunge-95-thanks-to-hd-dvd-and-che/http://www.engadget.com/2008/04/25/yowza-toshibas-net-profits-plunge-95-thanks-to-hd-dvd-and-che/http://www.engadget.com/2008/04/25/yowza-toshibas-net-profits-plunge-95-thanks-to-hd-dvd-and-che/#commentsA year ago today Toshiba was announcing ¥26.17 billion in profits for the quarter. Today, just ¥1.25 billion or about $12 million. In addition to the $580 million hit on account of its withdrawal from HD DVD, Toshiba also saw a swift decline in flash memory prices. While bad news for Toshiba on all accounts, we consumers are basking in a market dominated by a single high-def optical disc standard and cheap NAND and DRAM pricing. Sorry Tosh, but you won't find any tears around here.

Yowza: Toshiba's net profits plunge 95% thanks to HD DVD, flash prices originally appeared on Engadget on Fri, 25 Apr 2008 04:59:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>breaking newsBreakingNewsdramfinancialflashhd dvdHdDvdnandprofittoshibaFri, 25 Apr 2008 04:59:00 EST<![CDATA[Hynix ships fastest one-gigabit LPDDR2 chip for mobile devices]]>http://www.engadget.com/2008/04/07/hynix-ships-fastest-one-gigabit-lpddr2-chip-for-mobile-devices/http://www.engadget.com/2008/04/07/hynix-ships-fastest-one-gigabit-lpddr2-chip-for-mobile-devices/http://www.engadget.com/2008/04/07/hynix-ships-fastest-one-gigabit-lpddr2-chip-for-mobile-devices/#commentsThough not quite as impressive as the idea of toppling Intel and AMD within the next ten years, Hynix Semiconductor still has a decent reason to brag today. The South Korean chip producer has announced that it has just started mailing out the "fastest data transferring advanced dynamic random access memory (DRAM) chip for mobile devices." Said chip is the one-gigabit LPDDR2 (low-power double-data-rate 2), which was crafted using 66-nanometer technology and features an 800-megabits per second operating speed at 1.2-volts. No word on exactly what devices will see the super-speedy chip packed within, but a company spokesperson did note that it plans on ramping up production during Q4 to meet "growing demand for flat-panel television sets and high-end handheld devices."

[Via Physorg]

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Hynix ships fastest one-gigabit LPDDR2 chip for mobile devices originally appeared on Engadget on Mon, 07 Apr 2008 03:51:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>dramhynixHynix SemiconductorHynixSemiconductorLPDDR2memorymemory chipMemoryChipramMon, 07 Apr 2008 03:51:00 EST<![CDATA[Korean researcher hopes to build ferroelectric RAM]]>http://www.engadget.com/2007/10/19/korean-researcher-hopes-to-build-ferroelectric-ram/http://www.engadget.com/2007/10/19/korean-researcher-hopes-to-build-ferroelectric-ram/http://www.engadget.com/2007/10/19/korean-researcher-hopes-to-build-ferroelectric-ram/#commentsIf you've fantasized about how wonderful your life could be if the merits of DRAM, SRAM and Flash memory could all be mixed harmoniously into one "dream semiconductor," listen up. You may not be up to speed on all the advancements in ferroelectric materials, but we're pretty sure even the technological newbie could appreciate a new discovery by Korean researcher Dr. Shin Young-han. Reportedly, this fellow has "succeeded in figuring out the operational mechanism of ferroelectrics," which could potentially lead to FeRAM -- a technology that could "store data ten times faster than Flash memory and keep it for longer than ten years." Kudos to you, Dr. Shin, now let's get this stuff on the production line, shall we?

[Image courtesy of Ferra]

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Korean researcher hopes to build ferroelectric RAM originally appeared on Engadget on Fri, 19 Oct 2007 16:59:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>dramferamferroelectricflash memoryFlashMemorykoreakoreanmemoryramFri, 19 Oct 2007 16:59:00 EST<![CDATA[Sony and Qimonda form joint venture to design DRAM chips]]>http://www.engadget.com/2007/10/02/sony-and-qimonda-form-joint-venture-to-design-dram-chips/http://www.engadget.com/2007/10/02/sony-and-qimonda-form-joint-venture-to-design-dram-chips/http://www.engadget.com/2007/10/02/sony-and-qimonda-form-joint-venture-to-design-dram-chips/#comments
Barely a fortnight after Sony disclaimed reports that it was pondering the sale of its PS3 chip production facilities, the firm has decided to partner up with Qimonda in a 50-50 venture "to design DRAM chips for consumer and graphics applications." The new entity will be dubbed Qreatic Design, will be based in Tokyo and is scheduled to start operating by the end of 2007. Of note, financial terms of the deal weren't released, but Qimonda's chief executive did state that the agreement would "support its future product design and solutions development and would further pave the way for product diversification in non-PC applications." [Warning: read link requires subscription]

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Sony and Qimonda form joint venture to design DRAM chips originally appeared on Engadget on Tue, 02 Oct 2007 23:58:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>businesschip productionChipProductionDRAMindustryjoint ventureJointVenturejvQimondaQreatic DesignQreaticDesignRAMsonyTue, 02 Oct 2007 23:58:00 EST<![CDATA[iPhone / iPod to consume 25% of global flash memory output?]]>http://www.engadget.com/2007/07/19/iphone-ipod-to-consume-25-of-global-flash-memory-output/http://www.engadget.com/2007/07/19/iphone-ipod-to-consume-25-of-global-flash-memory-output/http://www.engadget.com/2007/07/19/iphone-ipod-to-consume-25-of-global-flash-memory-output/#commentsC'mon, don't act so shocked -- you had to realize that these record sales of NAND-based iPhones and iPods were using up some serious flash memory, right? Turns out, Apple's two biggest hits are "expected to consume 25-percent of the global flash output," which could in turn drive up prices of said memory in the not too distant future. DRAMeXchange, a market research company out of Taiwan that tracks the memory industry, further suggested that it could take "about two to three quarters before manufacturers can raise their chip yield rates to a higher level," which doesn't bode well for anyone hoping to see a price cut on any of Apple's handhelds due to increased volume purchasing in the memory department.

[Via CNET]

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iPhone / iPod to consume 25% of global flash memory output? originally appeared on Engadget on Thu, 19 Jul 2007 02:28:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>appledramflash memoryFlashMemoryiphoneipodipod nanoIpodNanomemorynandportable audioportable videoportableaudioportablevideopricepricespricingramreportresearchThu, 19 Jul 2007 02:28:00 EST<![CDATA[JEDEC finally unveils official DDR3 standards]]>http://www.engadget.com/2007/06/26/jedec-finally-unveils-official-ddr3-standards/http://www.engadget.com/2007/06/26/jedec-finally-unveils-official-ddr3-standards/http://www.engadget.com/2007/06/26/jedec-finally-unveils-official-ddr3-standards/#commentsRest assured, this isn't the first (nor the last) time you'll see products launch before the official specs get ratified, but JEDEC is doing the honors today by introducing the DDR3 (Double Data Rate 3) memory device standard. Key improvements that were noted include a 1.5-volt power supply, increased operating temperature range, memory device reset, burst chop, dynamic on-die termination, output driver calibration, and write leveling among others. The standard is reportedly intended to operate over a "performance range from 800 to 1600 MT/s (million transfers per second)," and while we certainly appreciate the details finally coming forward, the bevy of product launches from months past sure dampened the thunder. [Warning: Word document read link]

[Via Inquirer]

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JEDEC finally unveils official DDR3 standards originally appeared on Engadget on Tue, 26 Jun 2007 16:38:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>ddr3dramjedecramratifiedSDRAMTue, 26 Jun 2007 16:38:00 EST<![CDATA[NEC integrates more components into 'system-on-glass' LCDs]]>http://www.engadget.com/2007/05/24/nec-integrates-more-components-into-system-on-glass-lcds/http://www.engadget.com/2007/05/24/nec-integrates-more-components-into-system-on-glass-lcds/http://www.engadget.com/2007/05/24/nec-integrates-more-components-into-system-on-glass-lcds/#comments
NEC's relatively low-key system-on-glass technology is getting a substantial upgrade today, as the company announced that it has "developed an LCD module that incorporates all chips, including the LSI, with memory on the glass substrate." Current LCD modules have the pixel-driving chips right on the glass with LSI / memory embedded on a "separate board and attached to the module," but this new approach enables the firm to cram DRAM, DACs, and other necessary functions onto a polysilicon thin film right on the glass. The prototype device is a 1.1-inch TFT LCD display with 160 x 120 pixels and DRAM that can store a meager 230-kilobytes on data, and while the company is unsurprisingly dubbing it the "world's first" of its kind, the commercial realm won't be seeing an end product for a good "two to three years."

[Via Nikkei]

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NEC integrates more components into 'system-on-glass' LCDs originally appeared on Engadget on Thu, 24 May 2007 09:09:00 EST. Please see our terms for use of feeds.

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Don't look now Kingston, but OCZ is already going mano-a-mano with your DDR3 offering by introducing PC3-8500 (1066MHz) and PC3-10666 (1333MHz) RAM modules of its own. Designed to play nice with Intel's Bearlake chipset, the noticeably flashy DIMMs will be offered initially in in 2 x 512MB and 2 x 1024MB dual channel kits. The Gold DDR3 modules will sport the outfit's proprietary gold-mirrored XTC (Xtreme Thermal Convection) heatspreaders for boosting their heat dissipation abilities, and as with other premium products from OCZ, these too come with a lifetime warranty. Interestingly, the company claims that these are currently available but in "limited quantities," which means that you'll probably want to hold up on busting out your credit card if at all possible.

[Via TGDaily]

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OCZ announces PC3-8500 and PC3-10666 DDR3 RAM modules originally appeared on Engadget on Wed, 23 May 2007 17:44:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>ddr3dimmdramgold ddr3GoldDdr3launchmemoryoczPC3-10666PC3-8500ramXTCWed, 23 May 2007 17:44:00 EST<![CDATA[Samsung's GDDR4 graphics memory goes to 2000MHz]]>http://www.engadget.com/2007/02/23/samsungs-gddr4-graphics-memory-goes-to-2000mhz/http://www.engadget.com/2007/02/23/samsungs-gddr4-graphics-memory-goes-to-2000mhz/http://www.engadget.com/2007/02/23/samsungs-gddr4-graphics-memory-goes-to-2000mhz/#commentsWhile Samsung has been dabbling in the RAM world quite a bit of late, kicking out the micro-sized OneDRAM and cellphone-bound gigabit-density DRAM, the firm is now officially loosing its 2000MHz GDDR4 RAM on the world. While the zippy memory is already found on ATI's Radeon X1950 card, it'll now be available en masse to graphics card producers in order to speed up current and future offerings "by up to 66-percent." By using 80-nanometer production technology, the memory boasts a 4Gbps throughout, which is nearly two-thirds higher than the widely used 2.4Gbps GDDR4 variety out now; additionally, it'll be offered to vendors in just a 512MB density, rock a 32-bit data bus configuration, and utilizes "JEDEC-approved standards for signal noise reduction to help attain the highest possible speed." No word on how much Sammy plans on charging speed-freaked manufacturers, nor how long it'll take for a kilowatt-burnin' card other than the X1950 to include such a luxury, but we wouldn't count on it being too much longer, regardless.

[Via TGDaily]

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Samsung's GDDR4 graphics memory goes to 2000MHz originally appeared on Engadget on Fri, 23 Feb 2007 17:57:00 EST. Please see our terms for use of feeds.

Read | Permalink | Email this | Comments]]>atibandwidthdramgddr4gpugraphicsgraphics cardGraphicsCardledecmemorynanometernvidiaramsamsungFri, 23 Feb 2007 17:57:00 EST<![CDATA[IBM's eDRAM to triple memory and double performance of processors]]>http://www.engadget.com/2007/02/14/ibms-edram-to-triple-memory-and-double-performance-of-processor/http://www.engadget.com/2007/02/14/ibms-edram-to-triple-memory-and-double-performance-of-processor/http://www.engadget.com/2007/02/14/ibms-edram-to-triple-memory-and-double-performance-of-processor/#commentsLast month it was leaky transistors, now it's DRAM -- embedded DRAM to be precise -- at the bleeding edge of semiconductor news. Today, IBM's neo-maxi-zoom-dweebies will announce that their new type of memory will "triple" the amount of memory stored on computer chips while doubling the performance of processors. How you say? It's the SRAM, man. IBM's new eDRAM is faster than that scandalous DRAM -- nearly as fast as SRAM while taking up less space. As a result, IBM can replace most of the SRAM with the new, smaller eDRAM. Expect the new tech to appear in IBM's server chips starting in 2008.

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IBM's eDRAM to triple memory and double performance of processors originally appeared on Engadget on Wed, 14 Feb 2007 09:09:00 EST. Please see our terms for use of feeds.

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