FieldEffectTransistors
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Scientists build double-floating-gate FET, believe it could revolutionize computer memory
Look, we get it, you want DRAM that behaves like flash, flash that behaves like DRAM, and everything in between -- speedy computer memory that doesn't lose its data when the power goes off, and lasts for years on end. Well, it looks there's a new challenger about to enter that ring -- double floating-gate field effect transistors, currently in prototype form at North Carolina State University. Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs, the second floating gate lets bits of data stay in an active, ready state, but the computer can also apply a higher voltage to "freeze" them in place. Since the memory can switch between static and dynamic modes in a single cycle and the data never disappears in between, researchers imagine the new tech could lead to instant-on computers and power-saving techniques that shut down idle memory banks. That's the consumer take, at least -- find the technical deep dive at our more coverage link.
RepRap prints transistors, but fabs have little to fear
Budding hobbyists almost have it too easy these days, what with all the ready-made components, Mindstorms and Arduino boards, but there's still a couple of folks out there kicking it old-school... and printing transistors at home. Yes, that's a RepRap 3D printer you see there, with a MakerBot Unicorn pen head, depositing tiny dots of silver ink to form intricate rows of tiny electrodes. Sadly, the printer doesn't currently automate the entire process, as you'll also need to separately apply a dielectric material and a host of chemicals to get a working field effect transistor from scratch, but once the basic process is perfected the possibilities, as they say, are endless. Now if you'll excuse us, we've got a hot date with some vacuum tubes. Find the basic formula for DIY transistors at our source link.
Penn State busts out 100mm graphene wafers, halcyonic dream inches closer to reality
Yes, we've been marching on this road to graphene-based superconductive electronics for a long, long time. But in the space of one week, we've now seen two significant advancements pop up that rekindle our hope for an ultrafast tomorrow. Hot on the heels of IBM's recent bandgap achievement comes Penn State University with a 100mm wafer of pure graphene gorgeousness. Built using silicon sublimation -- a process of essentially evaporating the silicon away from the carbon layer -- these are the biggest graphene wafers yet, and field effect transistors are being built atop them now to start performance testing early this year. Naturally, nobody's sitting on this laurel just yet, with further plans afoot to expand beyond 200mm wafers in order to integrate fully into the semiconductor industry, whose current standard wafer size is around 300mm in diameter. On we go then.
