resistiveRAM
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IBM wants to accelerate AI learning with new processor tech
Deep neural networks (DNNs) can be taught nearly anything, including how to beat us at our own games. The problem is that training AI systems ties up big-ticket supercomputers or data centers for days at a time. Scientists from IBM's T.J. Watson Research Center think they can cut the horsepower and learning times drastically using "resistive processing units," theoretical chips that combine CPU and non-volatile memory. Those could accelerate data speeds exponentially, resulting in systems that can do tasks like "natural speech recognition and translation between all world languages," according to the team.
Future phones could house a terabyte of memory
You may think that the 3GB of memory in your new smartphone is hot stuff, but that pales in comparison with what Rice University has in store. Its scientists have detailed a form of resistive RAM (RRAM) that can be made using regular equipment at room temperatures, making it practical for everyday gadgets. The trick is the use of porous silicon oxide where metals (such as gold or platinum) fill the gaps. Using the silicon material doesn't just give manufacturers something familiar to work with; it requires much less power than previous techniques, can last through 100 times as many uses and isn't fazed by heat. It's also far denser than earlier RRAM, storing nine bits per cell where even conventional flash storage stops at three. The result should be an easy-to-make RAM chip with the kind of capacity that you'd normally expect from much larger permanent storage, like an SSD -- as the company Crossbar hinted when it first discussed this approach, you could stuff 1TB into a component the size of a postage stamp.
Crossbar's RRAM to boast terabytes of storage, faster write speeds than NAND
Hardware makers often sing the praises of their latest and greatest flash memory, but the folks at Crossbar are ready to show them up with resistive RAM (RRAM) that they've been quietly working on. Compared to NAND, RRAM comes in at half the size and boasts 20 times faster write speeds (140MB/s), reads data at 17MB per second, guzzles 20 times less power and has 10 times more endurance. Since RRAM is non-volatile memory, it can keep data even when it's powered off, á la NAND. As if that weren't enough, 3D stacking construction allows for several terabytes of storage, endowing one 200 x 200mm 200mm2 chip with one terabyte. Unlike many tech breakthroughs however -- we're looking at you, graphene -- this one is just about ready to find its way into finished products. Crossbar has manufactured RRAM within a standard chip factory, and claims that it can be churned out easily with existing production infrastructure. According to the firm, it's in the fine-tuning process and plans to introduce the tech into the world of embedded SoCs. Sure, the outfit is the exclusive holder of some RRAM patents, but it aims to license its know-how to system-on-a-chip creators. Update: Thanks to those readers who spotted our error on the silicon area -- it's now been fixed.
