You know, the thing about the future is, it'll probably come from Japan. Only yesterday we saw mammoth 50TB magnetic tapes, and today we're hearing the home of Nikon has come up with a new writing method for NAND flash memory that dramatically reduces the already humble power requirements of SSDs. Using their hot new single-cell self-boost technique, University of Tokyo researchers have been able to lower operational voltages down to 1V and thereby facilitate parallel writing to over 100 NAND chips at a time, resulting in the bombastic 9.5GBps writing speed claim. The whole thing has only just been announced, so don't go raiding your local tech store just yet, but we can at least start preparing ourselves for this madness whenever it does show up.
SSD power consumption reduced by 86 percent, speeds of 9.5GBps achieved by Japanese researchers
In this article: energy efficiency, EnergyEfficiency, ferroelectric, ferroelectric materials, FerroelectricMaterials, flash, flash memory, FlashMemory, future, japan, japanese, memory, nand, nand flash, NandFlash, research, ssd, tokyo, university, university of tokyo, university research, UniversityOfTokyo, UniversityResearch
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