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Toshiba introduces 32nm DDR NAND with 133Mbps speeds, or MT/s if you prefer

Sean Hollister

It doesn't quite have the efficiency and capacity of this 25nm process, and it's not half as speedy as that planned 400Mbps, but Toshiba is moving up in the world with today's reveal of 32nm, 133Mbps toggle-mode DDR NAND. The new flash memory chips will go head to head with the similar 30nm toggle-mode NAND used in Samsung's 512GB SSD and the 166Mbps ONFi 2.1 chips that power Crucial's RealSSD C300 drive; each of the tiny black chips can store up to 32 gigabytes. Shame there's no word on when we'll see these speeding our PCs and iPods, nor any mention of price. PR after the break.

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Toshiba Introduces Double Data Rate Toggle Mode NAND in MLC and SLC Configurations

IRVINE, Calif., Aug. 11 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* is introducing 32nm double data rate Toggle Mode NAND, in multi-level cell (MLC) versions with densities of 64Gb(1), 128Gb and 256Gb and single-level cell (SLC) versions with densities of 32Gb, 64Gb and 128Gb. Toggle Mode NAND features a faster interface than conventional or "legacy" asynchronous NAND memory with lower power consumption than competing synchronous DDR NAND product offerings.

Toshiba DDR Toggle Mode 1.0 NAND has a fast interface rated at 133 megatransfers/second(2) (MT/s), compared to 40MT/s for legacy SLC single data rate NAND, which makes it suitable for high performance solid state storage applications including enterprise storage. Since it uses an asynchronous interface similar to that used in conventional NAND, the Toshiba DDR Toggle Mode NAND requires no clock signal, which means that it uses less power and has a simpler system design compared to competing synchronous NAND alternatives. The DDR interface in Toggle Mode NAND uses a Bidirectional DQS to generate input/output signals (I/Os) using the rising and falling edge of the write erase signal. Toggle Mode NAND also has on-die termination to help achieve less crosstalk.

Scalability to future high-frequency operation is enabled as a result of the bi-directional data signal. Toshiba recently announced a commitment to a new standard for the most advanced high-performance NAND flash memory, a DDR NAND flash with a 400Mbps(3) interface. This next generation Toggle Mode DDR NAND 2.0 is targeted to provide a three-fold increase in interface speed over Toggle DDR 1.0 and a ten-fold increase over the 40Mbps single data rate NAND in widespread use today.

Toshiba Toggle Mode NAND supports common legacy NAND commands including basic, multi-plane and cache operations.

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