Qualcomm has unveiled its next-gen Snapdragon 835 flagship SoC (system on a chip) and confirmed rumors that it will be built by Samsung using its 10-nanometer FinFET process. Compared to the current 14-nanometer Snapdragon 821 (also built by Samsung), the new processor packs 30 percent more parts into the same space, yielding 27 percent better performance while drawing up to 40 percent less power, the company says. It also improved the design, which will yield "significant" improvements to battery life
Other companies, including Intel and TMSC, are working on 10-nanometer chips, but Samsung said it's the first to start building them. Samsung VP Jong Shik Yoon says "this collaboration is an important milestone for our foundry business," and no doubt a shot of good news to distract from Samsung's smartphone problems. Qualcomm expects devices with the first Snapdragon 835 processors, possibly including Samsung's Galaxy S8, to arrive in the first half of 2017. It reportedly has a Snapdragon 830 coming too, but is still mum about that SoC.
The new chip comes with Quick Charge 4, which supports 20 percent faster charging than Qualcomm's last-gen tech. That, the company says, will give you up to five hours of extra battery life with just a five minute charge. In just 15 minutes, it'll give Snapdragon 835 phones a half-full battery.