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Samsung starts producing faster 2GB LPDDR3 memory for mobile devices, 128GB flash storage too
While the scales may be steadily tipping towards mobile in the world of DRAM production, there's still plenty of room for technological enhancements. To prove the point, Samsung has just started mass production of what it claims to be the first 2GB LPDDR3 DRAM chip for mobile, which can shuffle information in and out 1,600 Mbps (compared to its 1,066 Mbps LPDDR2 predecessor), with up to 12.8 GB/s of bandwidth. In addition, the manufacturer has also started mass production of a place to hold all of that lovely data, in the form of a 128GB mobile flash storage chip. When will you be able to buy a superphone sporting 2GB of RAM and 128GB of storage? We don't know for sure, but even in the face of adversity all of the components seem to be falling into place.
Elpida starts shipments of next-gen Wide IO Mobile RAM
Tablets might be all sexy curves and Gorilla Glass, but it's what's on the inside that counts, right? Efficient DRAM mightn't set your heart alight, but Elpida Memory did just start shipping its next generation 30nm "Wide IO Mobile RAM." The firm claims it uses 50 percent less power compared with equivalent DDR2 sticks, letting you caress your beloved device for longer. This economy is thanks to it purring along at just 200MHz, which is even more impressive when you consider it brags a 12.8 GB/s data rate per chip. This pumped, yet frugal, performance comes courtesy of using x512-bit data width -- some ten times larger than that of existing DRAMs. The party doesn't stop there, with the Elpida also debuting its LPDDR3 chip, brushing aside LPDDR2 with twice the data rates at 6.4GB/s a slice, and a 25 percent smaller power-drain in tow. Mass production should commence in 2012, check the source link for the full break-down.
Samsung's 30nm DDR3 DRAM boosts speeds, cuts power consumption
Samsung has been taunting us with the promise of 30nm DRAM for quite sometime, and when the tiny chips went into mass production last year it was the world's servers that got first dibs. The average consumer stuck with that aging 40nm stuff -- blech. This summer though, you'll finally be able to snatch up some of Sammy's latest tech in the form of two and four GB DDR3 1600 sticks for both laptops and desktops. The company claims that its new RAM modules are up to two-thirds more energy efficient than more common 60nm chips and 20 percent faster that its own 40nm ones. Both solo and dual packs will be hitting retailers soon starting at "less than $30." Check out the PR after the break.
Samsung starts baking 30nm 4Gb LPDDR2 chips, packaging 2GB mobile RAM in April
When it comes to mobile RAM, capacity is often what pops to mind first while we overlook speed and power consumption, but Samsung's latest delivery is worth the extra attention. Earlier this month, said Korean giant started producing 30nm 4Gb 1066Mbps LPDDR2 (or simply Mobile DDR2) chips, in order to phase out its 40nm ones that topped 2Gb at a 800Mbps transmission rate. To put it in perspective, a 40nm 1GB package consists of four 2Gb chips, whereas the new 30nm one will only need two 4Gb chips, thus reducing the package thickness by 20 percent (down to 0.8mm) and power consumption by 25 percent. It's hard to tell when we'll start seeing these bits of silicon entering the consumer market, but Samsung's already stamping out 1GB modules this month, with a 2GB version to follow next month. Oh yes, we're definitely liking the sound of 2GB RAM for mobile phones.
Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3
Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated. Check out Samsung's PR after the break.
Samsung's high-speed 512GB SSD to begin volume production next month
Does jargon like "Toggle-mode DDR NAND" mean anything to you? No, but a maximum sequential read speed of 250MBps and 220MBps sequential write speed scampering past a SATA 3.0Gbps interface should. Samsung claims that its new SSD is just as power efficient as its 40nm-class SSDs thanks to 30nm-class 32Gb chips and a low-power controller designed specifically for the toggle-mode DDR. Encryption? You betcha: 256bit AES. Expect to see the 512GB SSD hit production lines next month for an unknown (but not cheap) price.
Samsung's 30nm DDR3 DRAM set to lower costs and power consumption later this year
It seems like we've been talking about Samsung and its 30nm promise for an eternity, but ever so slowly real products are starting to head out into real consumers' hands. After recently announcing its forthcoming NAND memory cards, the company is back with word of 2Gb DDR3 DRAM modules that consume 30 percent less power than their 50nm counterparts, yet are also more cost-effective to manufacture. Operating at either 1.5 or 1.35 volts, the 30nm parts are set for mass production in the second half of 2010, so they won't be here quite as soon as we'd like, but at least we'll know what to put down in our next Holiday Gift Guide. Just imagine your laptop purring along with a paired set of ultra-efficient RAM sticks and one of those newfangled 25nm-based SSDs from Intel -- you could probably power it on the sheer strength of your geek lust alone.
Samsung announces 64GB moviNAND flash, 32GB microSD card
It's been quite a while since Samsung announced the first actual memory device to result from its 30nm manufacturing process, but it's now back with an announcement for another pair of memory products that should both be hitting the market relatively soon. The larger of those is a new 64GB moviNAND embedded memory device, which joins the company's existing 32GB, 16GB, 8GB and 4GB options, and measures just 1.4mm thick while still packing 16 30nm-class 32Gb MLC NAND chips and a controller. That's joined by a new 32GB microSD card, which fully doubles the capacity of the highest capacity microSD cards currently on the market, and is apparently now being sampled by OEMs with mass production slated to begin sometime next month.
Samsung slims down NAND memory packaging, wafer-thin gadgets to follow
Good old Samsung and its obsession with thinness. After finally letting its 30nm 32Gb NAND chips out of the bag in May, the Korean memory maker has now successfully halved the thickness of its octa-die memory package to a shockingly thin 0.6mm (or 0.02 inches). The new stacks will start out at a 32GB size, though the real benefits are likelier to be felt down the line when the ability to pack bits more densely pays off in even higher storage capacities. Cellphones, media players and digital cameras will inevitably take the lion's share, but we're hopeful -- eternal optimists that we are -- that this could accelerate the decline of SSD prices to a borderline affordable level. Intel and Micron promised us as much, how about Samsung delivering it?
Samsung's 30nm NAND chips give birth to 32GB memory cards
Remember the halcyon days of 2007, when Beyonce's "Irreplaceable" rocked the charts and Samsung revealed its 30-nm manufacturing process, promising a 128GB memory card in every digicam? We're still not quite there yet, but the company is finally releasing the first cards to utilize that manufacturing process, the biggest offering 32GB of storage goodness. That's twice the capacity of its 40nm cards, which never made it past the 16GB mark. 30nm moviNAND chips are in production now in 4GB, 8GB, 16GB, and 32GB sizes, and hopefully will hit retail before that 33 megapixel Mamiya we've had on order finally ships.
Toshiba, IBM, Samsung and others in pact with the 32-nm devil
Toshiba just announced its membership in an alliance to develop system chips using 32-nm circuitry. That's well below the existing 45-nm processes used in manufacturing Intel's Penryn, for example. The alliance includes IBM, AMD, Samsung (already pushing 30-nm NAND), Infineon, Freescale, and Singapore's Chartered Semiconductor Manufacturing. No surprise really, what with Tosh already in bed with IBM to develop chips using 32-nm processes. The agreement is good until 2010 and covers design, development, and the production of the itty bitty circuitry. A move which should reduce manufacturing costs for the alliance with the savings passed along to us consumers.
Samsung reveals first 30-nm 64Gb NAND chip -- and a bit of skin
We're not sure what's more impressive here: the fact that Samsung has produced the world's first 30nm-class 64Gb (bit, not byte!) NAND chip or that they're now roping defenseless product waifs into hawking their silicon wafers. Nevertheless, we're looking at a serious jump in density in just 10 months. A maximum of 16 of the new chips can be combined for cost-effective 128GB (byte, not bit!) MLC NAND-based flash cards used primarily for data storage. Sammy's faster SLC based flash cards will still be the preferred choice when speed is of the utmost priority and cost isn't an issue. As such, Samsung also announced a 32Gb SLC NAND chip based on the same SaDPT (Self-aligned double patterning technology) manufacturing process. Sadly, we'll have to wait until 2009 for production to begin. Still, he looks happy dontchathink?[Via AVING]
