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Macronix plans to heat up flash memory to keep it from burning out
Despite the looming threat of being replaced by phase-change memory, contemporary memory modules aren't quite ready to be shown the door -- engineers at Macronix have found a way to revive spent NAND flash cells. Most flash modules fail after being written to and erased about 10,000 times, but Macronix found that the tired memory could be restored by baking it for extended periods of time. The team funneled the time consuming and cumbersome solution into a more practical package: a redesigned memory chip that packs onboard heaters. The new modules are designed to periodically heat focused groups of memory cells to 800 °C (1,472 °F) for a few milliseconds, effectively "healing" worn cells. Researchers found that heated chips could tolerate more than 100 million write/erase cycles and erased faster at higher temperatures. The team said the power drain of the heaters shouldn't effect battery life, either -- chips don't have to be heated often, and when they do, it can be done while prospective devices are recharging. Macronix will be presenting the technology at the IEEE International Electron Devices Meeting next week, but project deputy director Hans-Ting Lue wouldn't say when the company plans on taking the technology to market. Lue was willing to speculate on what might become of it, however. "This may evolve into a 'thermally assisted' mode of operation that gives both better performance -- such as the faster erasing -- and better endurance flash memory." Faster, more reliable, super-heated memory. Sounds fine by us. [Image credit: Emily Cooper, IEEE]
Samsung creates F2FS file system for NAND flash storage, submits it to the Linux kernel
Has the lack of NAND flash storage-optimized file systems been bugging you? Then you've got something in common with Samsung, which has developed F2FS (or "Flash-Friendly File-System") for the memory of choice for mobile devices and its specific "internal geometry." It's based on a log-structured method, but tackles problems associated with older file systems intended mainly for retro, spinning-disk storage. The company isn't keeping its hard work behind lock-and-patent either -- it's gone open-source and submitted the file system to the Linux kernel, meaning you could see it implemented in Android hardware of the future. It's nice to see Sammy contributing code for the greater good, and if you've got the skills to understand it, a low-down of F2FS is available at the source below.
Samsung SSD 840 Pro caters to speed seekers with faster random access
It's difficult to thrive in the solid-state drive world. Unless you've got just the right controller and flash memory, most performance-minded PC users will rarely give you a second glance. Samsung muscled its way into that narrow view with the SSD 830 last year; it intends to lock our attention with the new SSD 840 and SSD 840 Pro. The Pro's 520MB/s and 450MB/s sequential read and write speeds are only modest bumps over the 830, but they don't tell the whole story of just how fast it gets. The upgraded MDX controller boosts the random read access to a nicely rounded 100,000IOPS, and random writes have more than doubled to 78,000IOPS or 90,000IOPS, depending on who you ask and what drive you use. The improved performance in either direction is a useful boost to on-the-ground performance, as both AnandTech and Storage Review will tell you. We're waiting on details of the ordinary triple level cell-based 840 model beyond its 120GB, 250GB and 500GB capacities, although there won't be an enormous premium for the multi-level cell 840 Pro over existing drives when it arrives in mid-October -- the flagship line should start at $100 for a basic 64GB drive, and peak at $600 for the ultimate 512GB version.
Samsung starts mass-producing 4x faster mobile flash memory, kickstarts our phones and tablets
Samsung isn't content to leave fast NAND flash memory to traditional solid-state drives. Its Pro Class 1500 promises a big jolt to the performance of frequently pokey smartphone and tablet storage. By how much? That name is a clue -- it reaches 1,500 IOPS (inputs/outputs per second) when writing data, which along with 3,500 IOPS data reads is about four times faster than any previous embedded flash chip Samsung has tested. In the real world, that leads to as much as 140MB/s when reading data and 50MB/s for writes. The speed comes after Samsung has thrown virtually every trick in the book at its new chips, including a dense 20-nanometer manufacturing process, quick toggle DDR 2.0 memory with its own controller and a new JEDEC memory standard with 200MB/s of bandwidth to spare. Samsung hasn't named customers for the 16GB, 32GB and 64GB parts that are rolling out of the factories, although we'd do well to remember that a flourishing phone business doesn't guarantee that the only major customer is Samsung itself: even in the face of legal challenges, Samsung still has at least one noteworthy client that tends to snap up much of its flash supply.
Micron first to market with phase-change memory modules for portable devices (video)
Look out silicon and magnetic storage, here comes glass. Micron has announced production of the first commercial cellphone phase-change memory (PCM) modules, a type of flash RAM that works by changing a crystal solid to an amorphous state. The 1Gb chips will share a circuit board with 512Mb of standard volatile memory, just enough to go in feature phones for now -- but the company claims it will eventually offer larger modules for smartphone and tablet storage as well. PCM could scale to much faster speeds than conventional NAND flash, since it doesn't require a time-sapping erase before rewriting -- and with read speeds of 400MB/s, it's already into regular flash territory while still just a first generation product. Once the tech gets even quicker, PCM could even replace volatile RAM, allowing more secure storage in case of a power loss and reducing device costs and power usage. That means the glassy new kid could eventually bump silicon-based storage altogether -- ending its 40-year plus reign as king of the memory substrates. To see some of the ways it trumps NAND, check the video after the break.
Chuo University builds hybrid NAND-ReRAM unit that's faster than a speeding SSD
A team from Chuo University in Japan has developed a hybrid SSD that's reportedly 11 times faster than your average solid state unit. Combining NAND Flash with ReRAM, the magical union consumes 93 percent less power and lasts nearly seven times as long as pure-NAND products. Despite the high cost of ReRAM, it enables data centers to save on continuously replacing worn-out SSDs, and could see rapid adoption if worked into a commercial system. Their findings are being shown off at the Hawaii Symposium on VSLI Circuits this week -- after which, the team can reasonably expect to spend some time on the beach.
Toshiba Storage Products' THNSNF SSDs tap into 19nm process technology
32 nanometer process technology feels so... 2009. These days, Toshiba Storage Products is pushing something quite a bit smaller, as the outfit's new THNSNF solid state drives are said to be the world's first to take advantage of 19nm process NAND flash memory. 2012 just so happens to mark the 25th anniversary of Tosh's meddling in NAND, and the new series will be carrying the torch into even more bantam devices. Slates, Ultrabooks and perhaps a phablet or two may end up sporting on of these drives, replete with MLC (multi-level cell) flash. We're told that a trio of sizes will ship: there's a 9.5mm height edition, a 7mm version and an mSATA variant, all of which operate with a SATA 6Gbps interface. Power utilization is pegged at less than 0.1W, and mass production is expected to begin in August; mum's the word on partner companies implementing these into new products, but we're guessing the holiday season will be full of 'em.
Toshiba sings NAND Flash's praises, thinks you should too
Have you taken a moment today to stop and thank NAND Flash for existing? No? Well, Toshiba would like to say tsk, tsk. Today the company launched a full-scale campaign to promote this storage technology -- and by full-scale we mean a dedicated "25 Years of NAND Flash" website, a "NAND Flash Deprivation Experiment" video series, new Facebook and Twitter accounts and a Toshiba Excite 10 giveaway. We must have missed the memo that NAND was dangerously underappreciated, because we're still trying to figure out why it needs a marketing campaign of its own. Toshiba has a slew of laptop refreshes and the Excite 7.7 and 13 tablets just around the corner -- and that interim period between announcement and launch date can be killer -- but somehow talking up NAND Flash doesn't seem the right course of action. Take a look at the campaign's first video below the break and decide for yourself.
Intel SSD 520 review roundup: Intel reliability, SandForce speeds starting at $149
There's plenty of SSD options out there, but Intel's NAND drives are among the most well thought of, simply because they're so reliable. But, with the top speed of competing SSDs spiraling higher, Intel's rock-solid reputation may not be enough for some enthusiasts. Enter the SSD 520, with a performance SandForce SF-2281 controller and custom firmware (codenamed Cherryville) on board to ensure the 520 meets Chipzilla's demanding standards for stability. It's the result of a year and a half long collaboration between Intel and SandForce, and is available in both 7mm and 9.5mm thin form factors to fit any machine -- Ultrabook or otherwise. Aside from the SandForce chip, the 520 packs Intel's finest 25nm NAND Flash, a SATA 6GB/s connection and its 550MB/s reads and 520MB/s writes can be had for $149 in 60GB garb and prices escalate up to a grand for 480GB. Naturally, as this is Intel's effort to snatch back the performance market, a raft of reviews have been written about the SSD 520.So, how does the 520 stack up? Well, Intel's so confident in the 520 that it's backed the SSD with a five-year warranty. Though its performance doesn't drastically outpace its competition, Storage Review found the drive to be on par with the current speed king, OCZ's Vertex 3 in its benchmarks -- and also found performance and stability to be quite good in both enterprise use and in RAID arrays. Meanwhile, AnandTech found that the 520's peak random write speeds quite similar to its sequential reads during testing, which shows how well the optimized firmware works with the NAND. Hot Hardware thought the 520 to be comparable to other SandForce-equipped SSDs, but in terms of power consumption, Tom's Hardware found Intel's latest to be a power hog. Generally, all the reviewers were in agreement: the 520 is a speedy SSD, but you pay a hefty premium for Intel's reputation for churning out reliable drives. Only time will tell if the 520 can deliver the reliability we want, but there's plenty of performance info to be had in the reviews listed below.
Intel, Micron unveil first 128-gigabit flash chip, provide double the data density
Realign the data and the previous 32- and 64-gigabit roadblocks to flash storage disappear. Today, Intel and Micron announced the first 128-gigabit NAND flash chip. The chip, which was created through the companies' joint IM Flash Technologies venture, is smaller than a fingertip, created through a 20 nanometer manufacturing process and is capable of 333 megatransfers per second with the option of stacking as many as eight chips on top of each other. What makes the new NAND unique is its planar structure that allows individual memory cells to scale much smaller than before. When combined with a Hi-K/metal gate combo to keep the power leaks to a minimum, presto, you've got flash memory denser than your mother-in-law's fruitcake. Mass production of the 128Gb chips isn't due until the first half of 2012, but you can get a more in-depth intro to the future of flash right now in the PR below.
Corsair adds 90GB SSDs to Force 3 / GT lines
Been thinking Corsair's Force SSD lineup was too small at 60GB, but too darn capacious at 120GB? Well Goldilocks, we've got good news, as the company's unveiled two middling models that might be just right. We begin with the 90GB Force 3, which wields 550MB/s reads and 500MB/s writes at a $159 price point. For an additional $40, you can bump speeds up by 5MB/s on both counts with the identically sized Force GT. Just like their smaller and larger brethren, the two additions tote SandForce SF-228x controllers as they haul bits over SATA 6Gbps. They're supposedly available "immediately," but, like AnandTech, we couldn't find either in stock. If middle of the road is your thing, then Godspeed, but we'll stick with the big one.
Samsung's 6Gbps SSD gets a consumer label, October release date
Many SSDs could easily blow away that legacy spinning drive in your notebook, but there's always room for a performance boost when it comes to tech. Announced last week, Samsung's 830-series SSD packs up to 512GB of storage, and full support for SATA's 6Gbps max throughput -- a 100 percent boost over Samsung's previous gen drive. There's only one problem with last week's version: it's only available to OEMs, leaving a DIY upgrade out of the question. Well, today Samsung announced consumer availability for the same drive, letting any Joe Bag O' PC Upgrades pick one up at retail come October. Drives will be available in 64, 128, 256, and 512GB capacities, with pricing details coming at the official launch this fall. Jump past the break for the full PR, should you care to read all about the drive's "precision engineered" brushed metal enclosure, with "deep black" highlights and a "stylish and chic exterior" -- exactly the features you should be looking for in an SSD.
Samsung's speedy 6Gbps SSDs shreds bits, blows minds
For most of us, the decision to move to flash-based storage has been one wrought with compromise: suffer through a year of ramen to afford a capacious SSD, or splurge on steak and settle for a cramped one. While we await our platterless future, Samsung keeps on chuggin', having just begun volume production of a speedier line of solid state drives it calls the PM830. Available in 128, 256 or 512GB flavors, they tout 20nm-class MLC NAND flash and SATA 6Gb/s support -- which equates to 500MB/s reads and 350MB/s writes, or almost double last year's model. Before you reach for the plastic, know that the line is available only to OEMs -- you know, computer manufacturers -- with the firm promising consumer-friendly goodies for all you DIY types soon. Of course, no word on when that'll be or how much they'll cost, but at least the PR after the break's free, right?
SandForce demos 24nm flash from Toshiba, cheaper SSDs on the horizon
SandForce, the company behind the companies that make some of the best SSDs on the market, is at it again -- this time demoing 24nm NAND flash from Toshiba at the Flash Memory Summit in Santa Clara, CA. An SF-2000 processor was matched with the new shrunk-down storage, a 6Gb/sec SATA connection, and jammed inside a 2.5-inch enclosure to deliver 500MB/sec read and write speeds. It's not the fastest we've seen, but the big news here isn't the data rates -- it's the potential for cheaper SSDs. The smaller manufacturing process means Toshiba will be able to squeeze more storage out of the same wafer of silicon and, hopefully, shrink those still somewhat bloated prices. Check out the full PR after the break.
iSuppli: Apple iCloud could affect NAND Flash market
Apple's upcoming iCloud service could have a negative effect on the NAND Flash market says IHS iSuppli. The market research firm suggests a change from phone and computer-based storage to online storage could lessen demand for flash memory in the future. Of course, iCloud in its current from is a sync service, but this could easily change to a streaming and storage service in the future. This iCloud effect won't be felt immediately. Apple is expected to scoop up 30% of the available supply of NAND flash memory in 2011 and should keep its position as the world's largest buyer of NAND flash memory for the next several years. As consumers gradually move their digital libraries online, the demand for on-device storage could decrease by as much as 100 GB per user. This drop could have a serious impact on NAND flash suppliers like Samsung or Toshiba. [Via Digitimes]
New MacBook Airs may include high-speed 400MBps flash memory
The next generation MacBook Air may get a flash memory boost according to a report from Macotakara. The new NAND flash memory could replace the Blade X-Gale SSDs in the current generation MacBook Air models. This Toggle DDR 2.0 technology boasts of 400 MBps transfer rates and a 19-nm process size. As a result, read times could reach 261 MBps and write times could be bumped up to 209 MBps. [Those performance numbers refer to the current generation of MBA solid state disks, not the rumored next generation. We apologize for the error. –Ed.] These small memory chips may be soldered on the MacBook Air's base circuitry. The new and improved MacBook Air models are expected to arrive soon after the debut of Mac OS X Lion. A Gold Master version of Lion was seeded to developers last week and should be publicly available in the upcoming weeks. [Via AppleInsider]
Buffalo's 256GB SSD comes with 6GBps SATA interface, silly price tag
The SSD market is about to get a little more crowded, now that Buffalo has unveiled a new, 256GB fatty. The company's SSD-N256S/MC400 has a SATA 6Gbps interface, supports multi-level cell NAND Flash memory and boasts read and write speeds of up to 405 MB/s and 223 MB/s, respectively. If you're interested in grabbing one, you'll have to shell out a cool ¥72,200 ($882). Or, you could get an even faster SSD for less money. The choice is yours.
TMS RamSan-70 SSD packs 2GB-per-second throughput, up to 900GB capacity
There are SSDs and then there are SSDs -- the Texas Memory Systems (TMS) RamSan-70 is definitely the latter, packing 900GB of high-speed SLC NAND flash onto a single half-length PCIe card. Boasting an incredible 2GB-per-second sustained external throughput, this near-terabyte solid state drive is clearly overkill for most of us, considering that it's guaranteed to have a sky-high price (once details are released). Instead, the "900GB Gorilla," as it's come to be known around TMS HQ, is destined for high-end servers -- though we certainly wouldn't object to clearing out a slot in our desktop, if by some miracle we can afford this monster when it starts shipping in four to eight weeks.
Samsung's 64Gb toggle DDR 2.0 NAND flash memory with 400Mbps transfer rate hits production
Get ready for it speed freaks, Samsung's toggle Double Data Rate 2.0 MLC NAND chips are now in production -- an industry first. The 64 gigabit flash chips manufactured using 20nm processes boast an impressive 400Mbps transfer rate. That makes these toggle DDR 2.0 chips about three times faster than toggle DDR 1.0 (a 133Mbps interface) or ten times faster than the 40Mbps SDR NAND flash in widespread use today. Look for 'em in future teardowns of tablets, SSDs, and smartphones.
Intel and Micron announce new 20nm NAND Flash manufacturing process
You didn't think Intel and Micron would just rest on their laurels after starting 25nm flash production last year, did you? The two are now back with an even more impressive 20nm process, and an 8GB MLC NAND device that measures just 118mm² and allows for a 30 to 40 percent reduction in board space. Of course, those 8GB chips can also be combined for far more storage, so you can count on seeing even higher capacity phones, tablets and SSDs sometime after production kicks off in the in second half of 2011. At that point, Intel and Micron also plan to show off a 16GB device that promises to allow for 128GB of storage in a solid-state storage solution smaller than a postage stamp. Full press release is after the break.
