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The big memory cube gamble: IBM and Micron stack their chips
Manufacturers have been murmuring about 3D memory chips for years, but an escalation in recent radio chatter suggests the technology is on the cusp of becoming commercial. Intel unveiled a Hybrid Memory Cube (HMC) at IDF, which promises seven times the energy efficiency of today's DDR3, and now IBM and Micron have shown their hand too. The pair just struck up a partnership to produce cubes using layers of DRAM connected by vertical conduits known as through-silicon vias (TSVs). These pillars allow a 90 percent reduction in a memory chip's physical footprint, a 70 percent cut in its appetite for energy, and -- best of all -- a radical increase in bandwidth: HMC prototypes have already scored 128Gb/s 128GB/s, which makes 6Gb/s SATA III look like a bottleneck. It certainly sounds like a game-changer, unless of course some rival technology like ferroelectric memory gets there first. Update: Doh, sorry for the wrong caps, which were shrunken by a factor of eight. For comparison, current high-level DRAM delivers around 12.8GB/s. [Thanks, Maximilian]
Ferroelectric transistor memory could run on 99 percent less power than flash
We've been keeping an optimistic eye on the progress of Ferroelectric Random Access Memory (FeRAM) for a few years now, not least because it offers the tantalizing promise of 1.6GB/s read and write speeds and crazy data densities. But researchers at Purdue University reckon we've been looking in the wrong place this whole time: the real action is with their development of FeTRAM, which adds an all-important 'T' for 'Transistor'. Made by combining silicon nanowires with a ferroelectric polymer, Purdue's material holds onto its 0 or 1 polarity even after being read, whereas readouts from capacitor-based FeRAM are destructive. Although still at the experimental stage, this new type of memory could boost speeds while also reducing power consumption by 99 percent. Quick, somebody file a patent. Oh, they already did.
New silicon film ferroelectric may pave the way for instant-on computers (or maybe not)
While the gang at Toshiba are still trying to bring FeRAM to the masses, a team of researchers at Cornell University have devised a new ferroelectric material composed of silicon and strontium titanate that they say can be used (someday!) to build "instant on" transistors. And you know what that means -- instant on computers for students, and instant on death rays for future robot armies. To coax the generally mild-mannered strontium titanate into acting "ferro-electrified" (not an actual scientific term), researchers grew it onto a silicon substrate using a process known as epitaxy. The material literally squeezed itself within the spaces of the silicon molecules, which gave it ferroelectric properties. As you may have guessed, this research was partially funded by the Office of Naval Research -- so the "death ray" remark may not be so off base, after all. We'll keep an eye out.[Via Daily Tech]
Toshiba makes progress on FeRAM, still no tangible product in sight
Phew. For a moment year or so there we reckoned that amazing FeRAM discovery had been pushed aside and forgotten entirely. Thankfully, Toshiba has picked up the ball and refined the original chainFeRAM architecture by creating a new architecture that prevents cell signal degradation -- which, as you may or may not know, is the usual tradeoff from chip scaling. In essence, this has allowed the company to design the world's highest bandwidth, highest density (128-megabit) non-volatile RAM. Unfortunately, this amazing device -- which should realize read / write speeds of 1.6 gigabytes a second and combine the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off -- is still in prototype form, which probably means we're months (if not years) away from actually seeing a tangible end product hit store shelves.[Via AkihabaraNews]
Korean researcher hopes to build ferroelectric RAM
If you've fantasized about how wonderful your life could be if the merits of DRAM, SRAM and Flash memory could all be mixed harmoniously into one "dream semiconductor," listen up. You may not be up to speed on all the advancements in ferroelectric materials, but we're pretty sure even the technological newbie could appreciate a new discovery by Korean researcher Dr. Shin Young-han. Reportedly, this fellow has "succeeded in figuring out the operational mechanism of ferroelectrics," which could potentially lead to FeRAM -- a technology that could "store data ten times faster than Flash memory and keep it for longer than ten years." Kudos to you, Dr. Shin, now let's get this stuff on the production line, shall we?[Image courtesy of Ferra]
