pseudo open drain
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JEDEC announces final DDR4 RAM specification
A couple of companies have been jumping the gun on DDR4 production, but the JEDEC Solid State Technology Association is finally bringing order to the industry by releasing its official standard for the next-gen DRAM. It calls for "higher performance, with improved reliability and reduced power" -- which we roughly take to mean: less gigs for better rigs. The DDR4 per-pin data rate standard is 1.6 gigatransfers per second (GT/s) at the minimum and 3.2 GT/s at the top-end, although this cap is expected to increase in future updates (given that DDR3 also surpassed its initial target). Speeds will begin at 2133MHz, a significant jump from your average DDR3 stick, and will also operate at lower power thanks to the Pseudo Open Drain Interface. Check out the PR below if you want to delve deeper into the specs, and if even that's not enough to sate you, head to the source link below to tackle the full documentation. Godspeed!
Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3
Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated. Check out Samsung's PR after the break.
