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Future phones could house a terabyte of memory
You may think that the 3GB of memory in your new smartphone is hot stuff, but that pales in comparison with what Rice University has in store. Its scientists have detailed a form of resistive RAM (RRAM) that can be made using regular equipment at room temperatures, making it practical for everyday gadgets. The trick is the use of porous silicon oxide where metals (such as gold or platinum) fill the gaps. Using the silicon material doesn't just give manufacturers something familiar to work with; it requires much less power than previous techniques, can last through 100 times as many uses and isn't fazed by heat. It's also far denser than earlier RRAM, storing nine bits per cell where even conventional flash storage stops at three. The result should be an easy-to-make RAM chip with the kind of capacity that you'd normally expect from much larger permanent storage, like an SSD -- as the company Crossbar hinted when it first discussed this approach, you could stuff 1TB into a component the size of a postage stamp.
Silicon oxide forms solid state memory pathways just five nanometers wide
Silicon oxide has long played the sidekick, insulating electronics from damage, but scientists at Rice University have just discovered the dielectric material itself could become a fantastic form of storage. Replacing the 10-nanometer-thick strips of graphite used in previous experiments with a layer of SiOx, graduate student Jun Yao discovered the latter material worked just as well, creating 5nm silicon nanowires that can be easily joined or broken (to form the bits and bytes of computer storage) when a voltage is temporarily applied. Considering that conventional computer memory pathways are still struggling to get to 20nm wide, this could make for quite the advance in storage, though we'll admit we've heard tell of one prototype 8nm NAND flash chip that uses nanowires already. Perhaps it's time for silicon oxide to have a turn in the limelight.
