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LG lines up Optimus 4X HD for launch in Germany, Sweden, Great Britain, Italy and Poland
While there's already plenty of excitement around other quad-core Android phones, LG will join the party soon when its Optimus 4X HD launches in a few European countries next month. Germany, Sweden, Great Britain, Italy and Poland are all on deck in June, where this latest Optimus variant will bring a 4.7-inch 720p HD IPS LCD, Tegra 3 CPU (benchmarked and seen in white here) and 2,150mAh battery coupled with Android 4.0 Ice Cream Sandwich. On the software front, LG is touting its ability to take and share notes with "Quick Memo" (as seen in the Optimus Vu, now updated with the ability to include hyperlinks) as well as new "Media Plex" video playback controls. We got our hands all over this one during MWC 2012 a few months ago so until it drops in your neck of the woods, check out our gallery and video for a closer look or the press release after the break.
Silicon oxide forms solid state memory pathways just five nanometers wide
Silicon oxide has long played the sidekick, insulating electronics from damage, but scientists at Rice University have just discovered the dielectric material itself could become a fantastic form of storage. Replacing the 10-nanometer-thick strips of graphite used in previous experiments with a layer of SiOx, graduate student Jun Yao discovered the latter material worked just as well, creating 5nm silicon nanowires that can be easily joined or broken (to form the bits and bytes of computer storage) when a voltage is temporarily applied. Considering that conventional computer memory pathways are still struggling to get to 20nm wide, this could make for quite the advance in storage, though we'll admit we've heard tell of one prototype 8nm NAND flash chip that uses nanowires already. Perhaps it's time for silicon oxide to have a turn in the limelight.
