transitionmetaldichalcogenide
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3-atom-thick transistor promises ultrathin electronics
Researchers from Cornell University announced a breakthrough in transistor technology in the latest issue of the journal, Nature. The team has reportedly developed a novel and highly efficient method of producing an experimental material known as transition metal dichalcogenide (TMD). TMD is an exceedingly thin (but highly conductive) film, which makes it useful in many high-tech applications -- everything from solar cells to flexible, wearable gadgets -- but also makes it a huge pain to produce in appreciable quantities. That is, until now.
