Graphene transistors have long been touted as the next big thing
to deliver a true leap in electronics of all sorts, but there's been a few considerable limitations holding them back from fully replacing silicon. IBM now says it's managed to overcome one of the biggest hurdles, however, and has announced that it's been able to open a "bandgap" for graphene field-effect transistors (or FETs). As EETimes
reports, that's important because while graphene does have a higher carrier mobility than silicon, it doesn't have a natural bandgap, which has so far kept the on-off ratio of graphene transistors far lower than their silicon counterparts. Of course, IBM insists that its still only just scratched the surface, and says that it's already hard at work on opening up an even wider bandgap, achieving even higher electric fields, further improving the on-off current ratios of graphene FETs.