Researchers at Cambridge University
have recently published a paper on their new type of WORM (write once read many) memory which is even more low powered than the ones that came before it. The new electron-only design of the memory is solution processed, making it low cost as well as it requires no lithography. The device, using ZnO semiconductor nanoparticles
to inject electrons into a polymer which is capable of conducting. The electrons are then used to program the memory by permanently lowering the conductivity of the polymer, producing insulation. This result is far lower power densities than previously recorded, by orders of magnitude. The research team believes that it can make further improvements to the device as they continue to work.