It's just been a little over a week since IBM researchers announced that they managed to open up a bandgap for graphene-based field-effect transistors, but they're now already back to show off what that's made possible: a 100GHz graphene transistor. What's more, this latest record-setting transistor (which IBM hopes will one day replace silicon transistors) was made using processing technology that's compatible with that currently used in advanced silicon device fabrication, which should no doubt help speed up its eventual commercialization. Of course, any widespread adoption is still quite a ways away, but IBM says that this new transistor "demonstrates clearly that graphene can be utilized to produce high performance devices and integrated circuits." For those keeping score, this first-of-its-kind transistor already beats the frequency performance of current state-of-the-art silicon transistors of the same gate length, which now top out at a mere 40GHz.

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IBM demonstrates 100GHz graphene transistor