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IBM's next gen flash storage to feature spinning electrons

Nilay Patel
August 20, 2007
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You don't usually think of IBM in the context of flash memory innovation, but all those processors Big Blue cranks out require some kind of cache , and the company's new joint venture with TDK is designed to create the next-gen of flash, using a technology called "spin torque transfer" that will allow scaling beyond 65nm. STT-RAM, as it's called, uses a current to "spin-polarize" electrons and align their magnetic fields to represent 1s and 0s. Intel and others have invested heavily in a rival next-gen tech called phase change, but IBM says STT is faster and may last longer. Obscure system-on-a-chip next-gen flash memory format war, here we come!

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