Nanowire-based memory promises leap in storage capacity

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Nanowire-based memory promises leap in storage capacity
Nanowires being used for memory is hardly a new idea, but a group of researchers at the University of Pennsylvania seem confident that they've found a way to leapfrog the competition, and shake up storage devices as we know them. Unlike other nanowire-based memory methods, their system employs a non-binary form of nanowire memory, which makes it possible to store three bit values (0, 1, and 2) instead of the usual two (0 and 1) -- crazy talk, we know. That, the researchers say, allows for a "huge increase" in memory density, with fewer nanowires needed to store the same amount of information as a binary nanowire-based memory system, which'd also make the actual devices smaller. Of course, that's assuming any of this stuff actually gets out of the lab, which seems to be a long ways off at best.

[Thanks, Dwight]
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