In this article: Dheeraj Mohata, DheerajMohata, effect, field, IQE, millivolt, MOSFET, Penn State, Penn State University, PennState, PennStateUniversity, power, power consumption, PowerConsumption, quantum tunneling, quantum tunneling field effect transistor, QuantumTunneling, QuantumTunnelingFieldEffectTransistor, research, science, semiconductor, semiconductors, transistor, transistors, volt
Yes, that awesome new 8-core chip in your PC is the fastest thing on the block, but it's got your utility meter spinning accordingly. Fortunately, researchers from Penn State have come up with a new high performance transistor that may turn future chips from power hogs into current-sipping silicon. The group, in cooperation with semiconductor manufacturer IQE, has created a high-performance transistor capable of significantly reducing power demand whether it's idle or switching. Doctoral candidate Dheeraj Mohata's the one who made it happen by inventing an alternative to traditional MOSFET (metal-oxide semiconductor field-effect transistors) technology capable of turning on and off using far less power. Mohata's method uses a tunneling field effect transistor crafted from dissimilar semiconductor materials to provide instant on-off capability at 300 millivolts -- compared to MOSFET's one volt requirement -- to provide a power savings of 70 percent. You can dig deeper into the technical transistor details at the source, but all you really need to know is that the ladies love a PC with paltry power consumption.
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