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IBM's prototype STT MRAM device spins your bits right round, baby, right round

IBM's prototype STT MRAM device spins your bits right round, baby, right roundIf you're a frequent reader you're surely well aware of the potential of spin torque transfer memory, or STT-MRAM, and how spin-polarized magnetic currents (and the electrons they love to caress) might hold the potential to revolutionize storage as we know it. If you can't get your noggin around the concepts, know the potential: a new type of memory that will be cheaper, faster, and more efficient than current RAM, while also having the flash-like ability to retain data without power. IBM, who first floated the idea last year, is now sharing some more details about its prototype device that, while only able to store 4Kb of data (roughly half the text of this post in ASCII), is said to be able to retain that for 10 years. There's still no word on when we might be able to buy some of the stuff for our home computers, or when it'll be able to hold something a little more impressive (like maybe a whole post), but we're guessing it'll be well into the next decade before your Three 6 Mafia MP3 collection starts ridin' spinning electrons that don't stop.

[Via MRAM-Info]

New research aims to speed up MRAM in a future you'll never live to see (probably)

A month after German researchers announced their latest breakthrough in MRAM design, physicists at Japan's Tohoku University now say that it is possible to use an electric field to manipulate the magnetic domains in a semiconductor -- eliminating moving magnets from MRAM completely. MRAM designed using the electric field method would be faster -- and would use less energy -- than earlier variations on the technology, thus making our lives easier and generally more awesome. Of course, none of this stuff actually exists yet, and it's still got fierce competition from competing ideas (like IBM's racetrack memory), so for now we'll just have to stay content with the four 128k chips we scraped out of our old XT.

[Via MRAM Info]

German researchers devise means for even faster MRAM


We've already heard plenty of claims about how MRAM (or magnetoresistive RAM) would leave traditional memory in the dust, but a group of German researchers are now saying that they've found a way to blow past the MRAM that IBM and others are just now putting the finishing touches on. Their big breakthrough, it seems, is a new spin-torque system that can flip the magnetic field storing the 1s and 0s with only a single "wobble" being allowed to take place. That's as opposed to the magnetic field in current MRAM systems, which requires some time to settle into place each time its flipped. There's apparently still some work to be done before we see any actual MRAM using this new system, however, as the current used by the German device too electrically dense to be supplied by the transistors used in MRAM circuits, although they seem confident that they can overcome that pesky little problem.

Toshiba says its 1GB MRAM chips are "almost ready," we're ready now

MRAM from Toshiba
It wasn't long ago that IBM promised to unleash its racetrack MRAM (magnetoresistive RAM) on a power and speed-hungry computing public, but now Toshiba says its 1GB MRAM chips are "almost ready". The chips use Spin-RAM (STT-RAM) and Toshiba fully expects them to take over where DRAM left off by 2015. They say their new chips use about 10 percent the energy used by DRAM and, like MRAM is supposed to do, retain memory even after the power supply has been cut off. So what does this mean? Instant boot-up, fast access times, and super-low power consumption. While MRAM has been announced by others, capacities and speeds promised by this 1GB jobby from Toshiba will certainly make things worthwhile.

[Via MRAM-info]

IBM's racetrack memory dashing towards commercialization

So, how do you go about impressing the world after busting out a few systems based around the "fastest chip on Earth?" By getting us all worked up for a little thing called racetrack memory, that's how. Far from being the first memory technology that runs laps around the DIMMs we're relying on today, IBM researchers are suggesting that this iteration could enable users to store substantially more data at a lower cost and be available in around a decade. Put simply, the gurus working the project have discovered a way to overcome the prohibitively expensive process of manipulating domain walls in magnetic storage, essentially making a long-standing approach entirely more viable. If you're totally in nerd heaven right now, we assure you, checking out the explanatory video waiting after the jump is a must-do.

[Via BBC]

Philips self-destructing MRAM on the way

Joining the ranks of quintessential kit that any spy (or CuteCircuit-equipped individual) should have on hand is Philips' self-destructing MRAM (magnetoresistive RAM). While securing data typically deals with some sort of password protection or biometrics, Philips' creation takes a page from the Mission: Impossible book by relying on magnetic loops remaining in flux to keep data accessible. Its MRAM chips are wrapped in two layers of soft, metallic foil -- one which is magnetized, and one that acts as a "keeper" by gathering flux from a permanent magnet and maintaining a closed loop surrounding the precious bytes. If a crazed data thief manages to crack open the enclosure and rip into the first layer of foil, all flux breaks loose and magnetic forces immediately raze any top secret files you may have been toting. If you just can't afford to spill those oh-so-privatized digital beans (or you simply enjoy that double agent lifestyle), keep an eye out for the presumably hush-hush release -- assuming, that is, this invention makes it from the patent stage into actual hardware.

[Via New Scientist Tech]

Freescale sells out for $17.6 billion, wants more

While cellphone giant Motorola has been busy selling endless iterations of the RAZR and other oddly-named phones, their semiconductor spin-off Freescale has been doing quite well for itself, and is on the verge of being purchased for quite a few billion dollars. Freescale just got a $17.6 billion offer from some private-equity types led by Blackstone, which values Freescale stock at $40 a share -- quite an improvement from the $13 a share Freescale went public with in 2004. Freescale has accepted the offer, on the condition that they can accept a better offer within 50 days, with a break-up fee to be paid to the Blackstone types if they do. We just looked between all the couch cushions, but we're still coming up a few billion short, so if you've got $18 bil or so burning a hole in your pocket, now's your chance to break into the hip and happenin' world of UWB, MRAM and other fancy microchips.

[Via El Reg]

Freescale first to market with MRAM chips

Remember those new MRAM (magnetoresistive RAM) chips the industry's been working on for the last decade or so? Well Freescale stepped away from all that UWB bidness long enough to develop what they're calling the world's first commercially available MRAM chips to combine RAM's endurance with the hard disk's ability to keep data while powered down. What about Flash memory you ask? Kicked to the curb son, since MRAM (or universal memory) is faster than flash and doesn't degrade over time. Only don't expect these new chips to hit your price sensitive consumer electonics just yet. The first markets for MRAM will most likely be automotive or industrial settings where durability is critical. So hold tight and let the invisible hand work some magic, mkay?
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