non-volatile
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Intel's 3D memory is 1,000 times faster than modern storage
Intel and Micron unveiled a novel new kind of non-volatile data storage device during a press conference on Tuesday. The chips, dubbed "3D XPoint" (pronounced "cross-point"), are being touted as the first new class of "mainstream memory" to hit the market since 1989. These new chips could soon speed up everything from cell phones and SSD laptops to genomic sequencers and supercomputers.
IBM turns metal oxides into non-volatile chips through liquid currents
IBM is worried that we're reaching the end of the road for CMOS technology -- that we need new materials beyond silicon to keep the power draw down in chips as their performance goes up. It may keep future circuitry extra-lean through a new technique that puts a metal oxide in silicon's place and allows for non-volatile processors and memory. By running ionized liquid electrolytes in currents through the oxide, the company can switch that oxide from an insulator to a conductor (and vice versa) that can reliably maintain its state, even when there's no power. The trick would let a logic gate or switch kick into action only when there's an event, rather than needing constant jolts of electricity -- and without the pressure or temperature changes that had ruled out metal oxides for chips in the past. We're still far from replacing silicon with more efficient oxides given the early state of IBM's work, but having a consistent method is an important first step.
NEC makes content addressable memory that takes data deposits sans power, RAM green with envy
Wouldn't it be great if system memory was super speedy like RAM and non-volatile like flash? Well, NEC and Tohoku University's new content addressable memory (CAM) has accomplished the trick -- it promises five-nanosecond retrieval speeds equal to sticks of DDR3 1600 and can store data even when the power's off. Spintronics logic is what makes the magic happen by setting the spin direction of electrons and using their interaction with magnetic forces to store bits of data. Those spinning attributes are then kept on the circuit even when there's no electricity flowing. The catch? This new CAM big -- 90nm compared to the 30nm DRAM currently available -- despite the fact it's half the size of previous CAM chips, and NEC's not telling how quickly it can write data. Of course, the tech is still in its developmental stages, so we won't getting its zero-power standby mode and instant-on capabilities in our gadgets for some time. PR after the break.
Flexible, organic flash memory on tap at the University of Tokyo
If the University of Tokyo has its way, we could be seeing an onslaught of flexible computing devices sooner than you think! Earlier this year the school made some noise with its stretchable OLED prototype and now a research group led by Takeo Someya and Tsuyoshi Sekitani has developed a non-volatile, flexible organic flash memory that may someday be used for large-area sensors, electronic paper devices, and non-volatile memory. Using a polyethylene naphthalate (PEN) resin sheet arrayed with memory cells, the memory can be bent until its curvature radius reaches 6mm without causing mechanical or electrical degradation. As it stands now, the device has a memory retention time of one day -- but the team maintains that this can be "drastically improved by reducing the size of the element and employing an SAM with a long molecular length." Piece of cake, right?
Breakthrough in ferroelectric materials could enable million-GB thumbdrives
While we have to agree with certain Engadget readers who feel that 640KB of RAM is plenty for most computing tasks, those darn scientists just keep looking for ways to stuff more and more data into smaller spaces. The latest breakthrough on the storage tip comes courtesy of researchers from Drexel and Penn, who have found a way to stabilize the simple physical property of ferroelectricity at the nano scale, making possible such obviously unnecessary densities as 12,800,000GB per cubic centimeter. Ferroelectric materials are usable as memory because they possess the ability to switch electric charges in so-called dipole moments, but before Drexel's Dr. Jonathan Spanier and colleagues decided to embed the materials in water, it had previously been impossible to screen those dipole moments at scales small enough to be useful. Don't expect to be able to buy a zillion gig, water-filled iPod anytime soon, though, as the research team still faces significant hurdles in actually assembling the nanowires that would make up such a drive with the proper density as well as developing a method of efficiently reading and writing data.
