InternationalElectronDevicesMeeting
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Intel talks up work on 22nm SoCs with Tri-Gate tech geared for mobile devices
Now that Ivy Bridge processors with Tri-Gate tech are in the wild humming away inside PCs, Intel's used the 2012 International Electron Devices Meeting to discuss its work on SoCs that also use the 22-nanometer 3D transistor tech. The processor giant didn't rattle off much in the way of specs or name the product lines that'll make use of the mobile-centric silicon, but it expects the hardware to handily outperform its 32-nanometer SoCs by 20 percent to 65 percent. Ballpark estimates on price are also MIA, so it's still unclear how the folks in Santa Clara will fare against ARM-based solutions with the new chips under their belts. In any case, Intel anticipates the fresh components will find their way into smartphones and tablets once they're ready to roll. [Image credit: huangjiahui, Flickr]
Fujitsu, SuVolta push SRAM to its efficiency limits, demo 0.425 volt chip
Get the power requirements down for your next generation of RAM and you can have a raise in your allowance. For the perfect example of two companies that learned to play nice together and deserve a little something extra, Fujitsu Semiconductor and SuVolta today announced the successful demonstration of their ultra-low-voltage SRAM blocks at the International Electron Devices Meeting in Washington, DC. The new SRAM, which sips a mere 0.425 volts (nearly half that of previous chips), uses SuVolta's PowerShrink CMOS platform with Fujitsu's energy-efficient process technology. The companies showed that a 576Kb block of SRAM can run at just 0.4 volts by cutting its CMOS transistor threshold voltage variation in half. It's all very technical and, speaking of which, you'll find all those science-y details and diagrams in the PR after the break. Now, whip us up a crucial component that sips half the power it used to and you'll get a boost in your allowance and an approving tussle of the hair.
