FerroelectricMaterials

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  • SSD power consumption reduced by 86 percent, speeds of 9.5GBps achieved by Japanese researchers

    by 
    Vlad Savov
    Vlad Savov
    05.20.2010

    You know, the thing about the future is, it'll probably come from Japan. Only yesterday we saw mammoth 50TB magnetic tapes, and today we're hearing the home of Nikon has come up with a new writing method for NAND flash memory that dramatically reduces the already humble power requirements of SSDs. Using their hot new single-cell self-boost technique, University of Tokyo researchers have been able to lower operational voltages down to 1V and thereby facilitate parallel writing to over 100 NAND chips at a time, resulting in the bombastic 9.5GBps writing speed claim. The whole thing has only just been announced, so don't go raiding your local tech store just yet, but we can at least start preparing ourselves for this madness whenever it does show up. [Thanks, Mike]

  • Breakthrough in ferroelectric materials could enable million-GB thumbdrives

    by 
    Evan Blass
    Evan Blass
    05.09.2006

    While we have to agree with certain Engadget readers who feel that 640KB of RAM is plenty for most computing tasks, those darn scientists just keep looking for ways to stuff more and more data into smaller spaces. The latest breakthrough on the storage tip comes courtesy of researchers from Drexel and Penn, who have found a way to stabilize the simple physical property of ferroelectricity at the nano scale, making possible such obviously unnecessary densities as 12,800,000GB per cubic centimeter. Ferroelectric materials are usable as memory because they possess the ability to switch electric charges in so-called dipole moments, but before Drexel's Dr. Jonathan Spanier and colleagues decided to embed the materials in water, it had previously been impossible to screen those dipole moments at scales small enough to be useful. Don't expect to be able to buy a zillion gig, water-filled iPod anytime soon, though, as the research team still faces significant hurdles in actually assembling the nanowires that would make up such a drive with the proper density as well as developing a method of efficiently reading and writing data.