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Korean researchers build first eight-nanometer NAND chip

Evan Blass

Reports of advances in memory storage densities aren't all that surprising anymore -- after all, storage devices have continually gotten both smaller and more capacious since IBM kicked out the first hard drive in 1956 -- but it's still nice to learn that the NAND flash used in our DAPs, cellphones, and soon laptops and desktops will break the terabyte barrier within the next decade. Researchers at the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center are claiming success in building the world's first NAND flash chip using an 8nm fabrication process, which could eventually lead to capacities as large as one terabyte in a package 1/25th the size of Samsung's 40nm 32GB unit. The breakthrough was realized by merging nanowires with silicon-oxide-nitride-oxide-silicon technology, and although it might seem like huge iPods are right around the corner, the research team still faces problems such as shrinking the area where data is saved. In other words, your gear isn't out of date quite yet, but you can rest assured that it will be soon.

[Via China View]

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