SiliconNanowire
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Ferroelectric transistor memory could run on 99 percent less power than flash
We've been keeping an optimistic eye on the progress of Ferroelectric Random Access Memory (FeRAM) for a few years now, not least because it offers the tantalizing promise of 1.6GB/s read and write speeds and crazy data densities. But researchers at Purdue University reckon we've been looking in the wrong place this whole time: the real action is with their development of FeTRAM, which adds an all-important 'T' for 'Transistor'. Made by combining silicon nanowires with a ferroelectric polymer, Purdue's material holds onto its 0 or 1 polarity even after being read, whereas readouts from capacitor-based FeRAM are destructive. Although still at the experimental stage, this new type of memory could boost speeds while also reducing power consumption by 99 percent. Quick, somebody file a patent. Oh, they already did.
Silicon oxide forms solid state memory pathways just five nanometers wide
Silicon oxide has long played the sidekick, insulating electronics from damage, but scientists at Rice University have just discovered the dielectric material itself could become a fantastic form of storage. Replacing the 10-nanometer-thick strips of graphite used in previous experiments with a layer of SiOx, graduate student Jun Yao discovered the latter material worked just as well, creating 5nm silicon nanowires that can be easily joined or broken (to form the bits and bytes of computer storage) when a voltage is temporarily applied. Considering that conventional computer memory pathways are still struggling to get to 20nm wide, this could make for quite the advance in storage, though we'll admit we've heard tell of one prototype 8nm NAND flash chip that uses nanowires already. Perhaps it's time for silicon oxide to have a turn in the limelight.
Stanford develops safer lithium-sulfur batteries with four times the charge of lithium-ion cells
Longer battery life is high atop our list of gadget prayers, and the brainiacs at Stanford are one step closer to making our dreams come true with a new lithium-sulfur technology. Half of this trick lies in the silicon nanowire anode that the same team developed back in 2007, whereas the new cathode consists of a similarly commodious lithium sulfide nanostructure. Compared to present lithium-ion batteries, Stanford's design is "significantly safer" and currently achieves 80 percent more capacity, but it's nowhere near commercial launch with just 40 to 50 charge cycles (Li-ion does "300 to 500") due to the compound's rapid degradation. That said, we're promised a theoretical quadruple boost in capacity as the technology matures, so until then we'll keep that hamster running in our backpack.
Silicon nanowire could convert light into electrical energy
Nanoelectonic devices have to have juice too, and thanks to a team at Harvard University, extraordinarily minuscule gizmos of the future could be powered via a "silicon nanowire that can convert light into electrical energy." The device itself is said to look much like a typical coaxial cable, but it's around 100,000 times smaller and shuns metal in favor of "silicon with three different types of conductivity arranged as layered shells." Reportedly, a single strand can output "up to 200-picowatts," which won't move much, but it could be just enough to run ultralow power electronics that could be worn on, or even inside, the body. Hopefully they'll have this all ironed out by the time we need a pacemaker.[Image courtesy of Harvard]
