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IBM's next gen flash storage to feature spinning electrons

Nilay Patel

You don't usually think of IBM in the context of flash memory innovation, but all those processors Big Blue cranks out require some kind of cache , and the company's new joint venture with TDK is designed to create the next-gen of flash, using a technology called "spin torque transfer" that will allow scaling beyond 65nm. STT-RAM, as it's called, uses a current to "spin-polarize" electrons and align their magnetic fields to represent 1s and 0s. Intel and others have invested heavily in a rival next-gen tech called phase change, but IBM says STT is faster and may last longer. Obscure system-on-a-chip next-gen flash memory format war, here we come!

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