DRAM
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Samsung's 30nm DDR3 DRAM boosts speeds, cuts power consumption
Samsung has been taunting us with the promise of 30nm DRAM for quite sometime, and when the tiny chips went into mass production last year it was the world's servers that got first dibs. The average consumer stuck with that aging 40nm stuff -- blech. This summer though, you'll finally be able to snatch up some of Sammy's latest tech in the form of two and four GB DDR3 1600 sticks for both laptops and desktops. The company claims that its new RAM modules are up to two-thirds more energy efficient than more common 60nm chips and 20 percent faster that its own 40nm ones. Both solo and dual packs will be hitting retailers soon starting at "less than $30." Check out the PR after the break.
Samsung starts baking 30nm 4Gb LPDDR2 chips, packaging 2GB mobile RAM in April
When it comes to mobile RAM, capacity is often what pops to mind first while we overlook speed and power consumption, but Samsung's latest delivery is worth the extra attention. Earlier this month, said Korean giant started producing 30nm 4Gb 1066Mbps LPDDR2 (or simply Mobile DDR2) chips, in order to phase out its 40nm ones that topped 2Gb at a 800Mbps transmission rate. To put it in perspective, a 40nm 1GB package consists of four 2Gb chips, whereas the new 30nm one will only need two 4Gb chips, thus reducing the package thickness by 20 percent (down to 0.8mm) and power consumption by 25 percent. It's hard to tell when we'll start seeing these bits of silicon entering the consumer market, but Samsung's already stamping out 1GB modules this month, with a 2GB version to follow next month. Oh yes, we're definitely liking the sound of 2GB RAM for mobile phones.
Sandy Bridge memory performance tested, value of expensive top-shelf memory questioned
Intel's Sandy Bridge chipset hasn't exactly had a flawless launch, but let's move past that and take a look at how well it performs before it starts breaking. One of the improvements here is meant to be better memory performance, and The Tech Report ran a variety of sticks through the gamut to see what the benefits of high-cost, high-speed memory is versus the cheaper stuff. The results showed that, in the vast majority of cases, DDR3-1333MHz memory was barely outclassed by the DDR3-2133MHz stuff, exhibiting only a modest improvement in games, just a couple FPS at most. Lesson learned? Save your pennies -- or go ahead and spend 'em elsewhere, like that new Thermaltake case.
Scientists build double-floating-gate FET, believe it could revolutionize computer memory
Look, we get it, you want DRAM that behaves like flash, flash that behaves like DRAM, and everything in between -- speedy computer memory that doesn't lose its data when the power goes off, and lasts for years on end. Well, it looks there's a new challenger about to enter that ring -- double floating-gate field effect transistors, currently in prototype form at North Carolina State University. Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs, the second floating gate lets bits of data stay in an active, ready state, but the computer can also apply a higher voltage to "freeze" them in place. Since the memory can switch between static and dynamic modes in a single cycle and the data never disappears in between, researchers imagine the new tech could lead to instant-on computers and power-saving techniques that shut down idle memory banks. That's the consumer take, at least -- find the technical deep dive at our more coverage link.
OCZ quits DRAM business to focus on super-speedy SSDs
OCZ, a company that started life a decade ago by churning out DRAM modules for enthusiasts to throw into their towering rigs, has now announced it's abandoning that market entirely. As PC Perspective points out, it's grown increasingly difficult for companies to differentiate their products when it comes to memory -- most of it just works and most of it is pretty fast -- and continually declining prices have apparently forced OCZ's hand. The San Jose-based company's new primary breadwinner will be solid state drives, which already account for a substantial proportion of revenues and look set to grow exponentially as their own prices dip a little further into the range of the affordable. It's a shame we'll no longer have that bold Z to look at when picking out memory sticks for our next self-built machine, but maybe it's all for the best. Check out an interview with an OCZ VP at the source link below.
Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3
Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated. Check out Samsung's PR after the break.
Elpida and Spansion move from 'it's complicated' to 'engaged,' look to conquer NAND universe
The more the merrier, right? Cutesy sayings aside, the world is gearing up to say "hello" to yet another player in the NAND flash memory market, as Japan's own Elpida Memory (which currently specializes in DRAM) will be joining the fray in the coming months. Said outfit stated this week that it has entered into an alliance with Spansion (the former flash memory joint venture between Fujitsu and AMD), with Spansion licensing its NAND flash intellectual property to Elpida as part of the deal. If all goes to plan, Elpida will begin producing flash chips at its western Japan plant "as early as next year," with some of the output being funneled directly to Spansion. 'Course, with the explosion in smartphone popularity, it's not shocking to see a DRAM stalwart looking for ways to dip its toes in that high-demand NAND stuff, and as consumers, you certainly won't find us kvetching about the competition.
Samsung's 30nm DDR3 DRAM set to lower costs and power consumption later this year
It seems like we've been talking about Samsung and its 30nm promise for an eternity, but ever so slowly real products are starting to head out into real consumers' hands. After recently announcing its forthcoming NAND memory cards, the company is back with word of 2Gb DDR3 DRAM modules that consume 30 percent less power than their 50nm counterparts, yet are also more cost-effective to manufacture. Operating at either 1.5 or 1.35 volts, the 30nm parts are set for mass production in the second half of 2010, so they won't be here quite as soon as we'd like, but at least we'll know what to put down in our next Holiday Gift Guide. Just imagine your laptop purring along with a paired set of ultra-efficient RAM sticks and one of those newfangled 25nm-based SSDs from Intel -- you could probably power it on the sheer strength of your geek lust alone.
Component shortages lead analysts to forecast rise in prices of personal electronics
As you might well know, we're not the biggest fans of analyst blather, but this piece of research by Gartner is backed by some substantial numbers. The FT reports that DRAM prices have recently risen by 23 percent, followed closely by LCD prices with a 20 percent jump, both in response to the financial crisis the whole globe seems to be suffering from. Because the effects of recently renewed investment in capacity building won't be felt for a while, we're told to prepare for higher prices throughout this year -- a significant combo breaker from the previous decade's average of around 7.8 percent drops. Oh well, let's just cling to the encouraging signs for the future and ignore this bump on the road to gadget nirvana. [Thanks, Ben W]
Rambus and Kingston build a threaded module prototype, claim 50 percent better memory throughput
How do you thread memory tasks and are women naturally better at it than men? Such were the questions that roamed our limitless minds as we sought to understand what exactly Rambus and Kingston had achieved. Based on standard DDR3 chips, the new threading tech essentially creates multiple independent channels per memory module, allowing multicore processors to utilize the available RAM more efficiently. That results, says Rambus, in systems that offer 50 percent higher throughput that the standard stuff and suckle 20 percent less power due to the compartmentalization of each module. Neat. More details are promised at the Intel Developer Conference, which kicks off tomorrow in San Fran.[Via SlashGear]
Toshiba makes progress on FeRAM, still no tangible product in sight
Phew. For a moment year or so there we reckoned that amazing FeRAM discovery had been pushed aside and forgotten entirely. Thankfully, Toshiba has picked up the ball and refined the original chainFeRAM architecture by creating a new architecture that prevents cell signal degradation -- which, as you may or may not know, is the usual tradeoff from chip scaling. In essence, this has allowed the company to design the world's highest bandwidth, highest density (128-megabit) non-volatile RAM. Unfortunately, this amazing device -- which should realize read / write speeds of 1.6 gigabytes a second and combine the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off -- is still in prototype form, which probably means we're months (if not years) away from actually seeing a tangible end product hit store shelves.[Via AkihabaraNews]
Rambus introduces 4.3Gbps mobile memory
It's not all just lawsuits and overinflated posturing for Rambus -- the prickly memory firm will later today demo what its calling the Mobile Memory Initiative, a 4.3Gbps phone-oriented variant of the XDR RAM used in the PS3 that requires just 100mV of power. That means companies can either build super-powerful phones that take advantage of a complete MMI system's estimated 17GBps throughput, or build cheaper devices that offer performance equivalent to today's memory with fewer MMI parts. Rambus won't say who it's working with to bring out MMI, but we're going to have to wait a bit before we all score cheap HD videophones -- the first products aren't scheduled to hit until early 2010.[Via Electronista]
Samsung's 4Gb chip promises 32GB DDR3 memory modules for PCs and laptops
Oh Samsung, you and your world's firsts. We like to tease but your latest breakthrough is truly notable: the world's first 4Gb (bit, not Byte) DDR3 DRAM PC memory chip based on relatively frugal 50-nm processes. Two things here: 1) the new chips consume 40% less power than previous DDR3 memory modules, and 2) the chips pave the way for 32GB (Byte, not bit) DIMM modules. The first modules will come in capacities of 16GB (containing 32 of the new 4Gb chips) for servers, 8GB DDR3 DIMMs for desktops, and 8GB SO-DIMMs for laptops. When, is the question Samsung fails to answer. The question to you is this: you're not still buying full-spec'd DDR2-based laptops are you?
Samsung seems pretty proud of world's highest density DRAM chip
Those of you who actually keep track of which outfits are on top of others in terms of density (yeah, all 8.4 of you) have a new winner to document, as Samsung has just announced the development of the planet's highest density DRAM chip. By utilizing 50 nanometer technology, Sammy has concocted a four gigabit DDR3 DRAM chip, and if it has its druthers, the low-power device will be used in data centers and servers the world over. The module can be produced in 16GB registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. If dual-die package technology is tapped into, the new device can scale as high as 32GB, though Samsung is careful not to mention just how much you'll have to pay for this stuff.[Via I4U News]
Taiwan's proposed DRAM industry bailout puts the word "global" in economic downturn
It looks like a $6.5 billion dollar bailout of Taiwan's DRAM industry is in the works, a move that is proving as controversial on the island as the auto bailout is Stateside. The DRAM market has been in decline a while now, as evidenced by the recent closure of the Hynix plant in Eugene, where some 1,100 souls once worked doggedly to topple the likes of Intel and AMD. Now, we don't really know all the particulars of this admittedly complex situation, but we sure hope that lawmakers over there are able to work something out -- after the recent debut of Phantom of the Opera peformed by robots at Taiwan's University of Science and Technology, we're sure that people there could use something to lift their spirits.[Via TG Daily]
Super Talent caters to Eee PC with new 16/32/64GB SSDs
Though not the first SSDs we've seen looking for homes specifically in netbooks, Super Talent is hoping to make an even bigger splash with its latest trio and their bite-sized prices. Merely days after causing us all to drool with a sub-$300 128GB drive, the firm has revealed a trifecta of mini PCIe SSDs designed "explicitly for the ASUS Eee PC." The units are available in 16GB, 32GB and 64GB flavors, each with 40MB/sec maximum read speeds and 15MB/sec maximum write rates. The trio is expected to hit mass production next month, and they'll only cost you $53, $79 and $149 in order of mention.[Via jkOnTheRun]
16GB Hynix DDR3 RAM modules demonstrated at IDF
Remember that MetaRAM technology we figured was nothing more than a sophisticated joke back in February? Intel, one of the noteworthy backers, has proven that said tech actually is one rung above snake-oil at its own Developers Conference in San Francisco. Hynix-made DDR3 DIMMs packing 16GB of memory were reportedly created via the MetaRAM method (and subsequently shown off), and just in case you're not wowed by such wizardry, the demo system included no fewer than ten of these modules. Just in case that sort of flew over your head, the machine they were in possessed 160GB of RAM. Unfortunately, we've a feeling these are quite aways out from hitting the consumer market.
Hynix set to close its Oregon plant, cutting 1,100 jobs
It may have once talked about toppling both Intel and AMD within a decade, but South Korea's Hynix looks to have been knocked back on its heels a bit amid a general downturn in the DRAM market, and it's now taken the rather drastic step of closing down its plan in Eugene, Oregon, eliminating some 1,100 jobs in the process. As EE Times points out, that move is at least partly due to the fact that 300mm plants are ramping up faster than expected, making 200mm plans like the one in Oregon far less cost effective to operate and, apparently, too expensive to upgrade. There's also the little matter of some tariffs the United States had imposed on Hynix, which it was able to avoid thanks to its plant in Oregon, but which now appear to be set to expire. For its part, Hynix denies that has anything to do with the plant closing, and it adds that it is still looking at ways to "have a presence" in Eugene.[Via The Wall Street Journal]
Toshiba says its 1GB MRAM chips are "almost ready," we're ready now
It wasn't long ago that IBM promised to unleash its racetrack MRAM (magnetoresistive RAM) on a power and speed-hungry computing public, but now Toshiba says its 1GB MRAM chips are "almost ready". The chips use Spin-RAM (STT-RAM) and Toshiba fully expects them to take over where DRAM left off by 2015. They say their new chips use about 10 percent the energy used by DRAM and, like MRAM is supposed to do, retain memory even after the power supply has been cut off. So what does this mean? Instant boot-up, fast access times, and super-low power consumption. While MRAM has been announced by others, capacities and speeds promised by this 1GB jobby from Toshiba will certainly make things worthwhile.[Via MRAM-info]
HP creates radical 'memristor' technology, brains explode
"Memristors" are one of several memory technologies that have been theorized and promised in the coming years. HP has made a real memristor, however, and the way solid state memory is created and stored could have just changed forever. First theorized in 1971, memristors are basic circuits like resistors, capacitors, and inductors. These circuits are able to store data by allowing their levels of electrical resistance to fluctuate between high and low, or 0 and 1 to a computer. Like flash memory, they retain that data without power -- except they do it all on one circuit and at the speed of D-RAM. In the end, we could be looking at a whole new kind of storage, as long as someone can figure out how to get these things onto integrated circuits. Nerds hats off, return to your fanboyism -- now.
