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Flash storage spec doubles speeds on future smartphones
Smartphones already have storage speeds that rival PCs and they're going to take another big leap soon. Standards group JEDEC has unveiled UFS 3.0, a new flash storage standard for mobile devices, Chromebooks, VR headsets and automotive devices that doubles the bandwidth of UFS 2.1 to a stellar 2.9 GB/s. That's only a theoretical maximum that real-world devices won't likely reach, however, and requires that the host device has the hardware to support it.
Samsung's new 10nm-process 64GB mobile flash memory chips are smaller, faster, better
Even though Samsung only announced volume production of ultra-fast eMMC memory chips back in August, it's already upgrading to a newer generation of hardware. Moving from the previous 20nm process to 10nm, the new 64GB eMMC Pro Class 2000 has a 20 percent smaller physical footprint, and claims 30 percent advantages in both performance and manufacturing productivity. While its previous chips only starting taking advantage of JEDEC's eMMC 4.5 interface standard a few months ago, Samsung plans to approach the group next year to create a new standard that can handle this design. It has a write speed of 2,000 IOPS (input/output per second) and a read speed of 5,000 IOPS, besting the 1,500/3,500 numbers reported on the older hardware, and kicks up the bandwidth to 260 MB/s read and 50MB/s write. These chips went into production late last month and are destined for slim phones and tablets near you, even if they don't say Samsung on the outside.
JEDEC announces final DDR4 RAM specification
A couple of companies have been jumping the gun on DDR4 production, but the JEDEC Solid State Technology Association is finally bringing order to the industry by releasing its official standard for the next-gen DRAM. It calls for "higher performance, with improved reliability and reduced power" -- which we roughly take to mean: less gigs for better rigs. The DDR4 per-pin data rate standard is 1.6 gigatransfers per second (GT/s) at the minimum and 3.2 GT/s at the top-end, although this cap is expected to increase in future updates (given that DDR3 also surpassed its initial target). Speeds will begin at 2133MHz, a significant jump from your average DDR3 stick, and will also operate at lower power thanks to the Pseudo Open Drain Interface. Check out the PR below if you want to delve deeper into the specs, and if even that's not enough to sate you, head to the source link below to tackle the full documentation. Godspeed!
Samsung starts mass-producing 4x faster mobile flash memory, kickstarts our phones and tablets
Samsung isn't content to leave fast NAND flash memory to traditional solid-state drives. Its Pro Class 1500 promises a big jolt to the performance of frequently pokey smartphone and tablet storage. By how much? That name is a clue -- it reaches 1,500 IOPS (inputs/outputs per second) when writing data, which along with 3,500 IOPS data reads is about four times faster than any previous embedded flash chip Samsung has tested. In the real world, that leads to as much as 140MB/s when reading data and 50MB/s for writes. The speed comes after Samsung has thrown virtually every trick in the book at its new chips, including a dense 20-nanometer manufacturing process, quick toggle DDR 2.0 memory with its own controller and a new JEDEC memory standard with 200MB/s of bandwidth to spare. Samsung hasn't named customers for the 16GB, 32GB and 64GB parts that are rolling out of the factories, although we'd do well to remember that a flourishing phone business doesn't guarantee that the only major customer is Samsung itself: even in the face of legal challenges, Samsung still has at least one noteworthy client that tends to snap up much of its flash supply.
Micron teases working DDR4 RAM module, aims for late 2012 production
JEDEC is still finalizing the standards for DDR4, but that doesn't mean component manufacturers are holding back on developing the tech now. Samsung announced the first DDR4 DRAM module last year, and now Micron has announced that it's developed a working part of its own. Using its 30-nanometer technology, the 4GB x8 part is just the first of many products in the company's DDR4 portfolio -- it will expand to include x16 and x32 parts with initial speeds of 2400 MT/s and eventually the JEDEC's targeted of 3200 MT/s. So when will DDR3 seem like a distant relic? Well, Micron is already sending around samples to clients, and it hopes to begin full-scale production by the end of the year. As always, jump past the break for the full press release.
Samsung develops DDR4 memory with up to 40 percent better energy efficiency than DDR3
Samsung's famed lead in component manufacturing is being extended today with the announcement of a DDR4 DRAM stick that can perform read and write operations using up to 40 percent less power than the old/current DDR3 stuff. Bandwidth maxes out at 2.13Gbps at 1.2V, while Pseudo Open Drain technology assists in minimizing the battery impact. Over time, Samsung projects the new DRAM modules will hit 4Gbps speeds. It's working away with server makers right now in order to achieve JEDEC certification, but the target market will clearly be laptops and other mobile devices, where energy-frugal memory like this would best be appreciated. Check out Samsung's PR after the break.
JEDEC finally unveils official DDR3 standards
Rest assured, this isn't the first (nor the last) time you'll see products launch before the official specs get ratified, but JEDEC is doing the honors today by introducing the DDR3 (Double Data Rate 3) memory device standard. Key improvements that were noted include a 1.5-volt power supply, increased operating temperature range, memory device reset, burst chop, dynamic on-die termination, output driver calibration, and write leveling among others. The standard is reportedly intended to operate over a "performance range from 800 to 1600 MT/s (million transfers per second)," and while we certainly appreciate the details finally coming forward, the bevy of product launches from months past sure dampened the thunder. [Warning: Word document read link][Via Inquirer]